Výsledky vyhledávání - "Chao Yao Yang"

Akademický článek

Valley Spin–Polarization of MoS2 Monolayer Induced by Ferromagnetic Order in an Antiferromagnet

Autor: Chun-Wen Chan, Chia-Yun Hsieh, Fang-Mei Chan, Pin-Jia Huang, Chao-Yao Yang

Publikováno v: Materials, Vol 17, Iss 16, p 3933 (2024)

Transition metal dichalcogenide (TMD) monolayers exhibit unique valleytronics properties due to the dependency of the coupled valley and spin state at the hexagonal corner of the first Brillouin zone. Precisely controlling valley spin-polarization vi

Externí odkaz: https://doaj.org/article/ffce2c719cf74c1fbc8854f25938590a

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Akademický článek

A Spin‐Orbit Torque Switch at Ferromagnet/Antiferromagnet Interface Toward Stochastic or Memristive Applications via Tailoring Antiferromagnetic Ordering

Autor: Ssu‐Yuan Wang, Sheng‐Huai Chen, Hao‐Kai Chang, Yi‐Ting Li, Chih‐Hsiang Tseng, Po‐Chuan Chen, Chao‐Yao Yang, Chih‐Huang Lai

Publikováno v: Advanced Electronic Materials, Vol 9, Iss 12, Pp n/a-n/a (2023)

Abstract Antiferromagnet (AFM) has currently participated in the spin‐orbit torque (SOT) technology due to its great potential to be applied to the field‐free SOT switching and to promote the thermal stability of MRAM. However, the effect of vary

Externí odkaz: https://doaj.org/article/9be97c0549a144c785a271bf15ab9512

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Akademický článek

Spintronic materials and devices towards an artificial neural network: accomplishments and the last mile

Autor: Rudis Ismael Salinas, Po-Chuan Chen, Chao-Yao Yang, Chih-Huang Lai

Publikováno v: Materials Research Letters, Vol 11, Iss 5, Pp 305-326 (2023)

ABSTRACTNeuromorphic computing based on brain-inspired frameworks has shown its potential to perform computation with remarkable power and speed efficiency. The spintronic device has been considered a promising candidate for neuromorphic computing be

Externí odkaz: https://doaj.org/article/b0154350b2dd4294bd5d1d1c55a40f82

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Akademický článek

Reduction-Induced Magnetic Behavior in LaFeO3−δ Thin Films

Autor: Nathan D. Arndt, Eitan Hershkovitz, Labdhi Shah, Kristoffer Kjærnes, Chao-Yao Yang, Purnima P. Balakrishnan, Mohammed S. Shariff, Shaun Tauro, Daniel B. Gopman, Brian J. Kirby, Alexander J. Grutter, Thomas Tybell, Honggyu Kim, Ryan F. Need

Publikováno v: Materials, Vol 17, Iss 5, p 1188 (2024)

The effect of oxygen reduction on the magnetic properties of LaFeO3−δ (LFO) thin films was studied to better understand the viability of LFO as a candidate for magnetoionic memory. Differences in the amount of oxygen lost by LFO and its magnetic b

Externí odkaz: https://doaj.org/article/52bf8da69fd2477db92dd65f9df724bb

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Akademický článek

Investigating Anisotropic Magnetoresistance in Epitaxially Strained CoFe Thin Films on a Flexible Mica

Autor: Guang-Yang Su, Min-Chang You, Kai-Wei Chuang, Ming-Hsuan Wu, Cheng-Hsun Hsieh, Chun-Yen Lin, Chao-Yao Yang, Aswin kumar Anbalagan, Chih-Hao Lee

Publikováno v: Nanomaterials, Vol 13, Iss 24, p 3154 (2023)

This study investigates the crystal structure, epitaxial relation, and magnetic properties in CoFe thin films deposited on a flexible mica substrate. The epitaxial growth of CoFe thin films was successfully achieved by DC magnetron sputtering, formin

Externí odkaz: https://doaj.org/article/4953b5f2b1114cf3bca7dbf4eafbd732

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Akademický článek

Current-induced Néel order switching facilitated by magnetic phase transition

Autor: Hao Wu, Hantao Zhang, Baomin Wang, Felix Groß, Chao-Yao Yang, Gengfei Li, Chenyang Guo, Haoran He, Kin Wong, Di Wu, Xiufeng Han, Chih-Huang Lai, Joachim Gräfe, Ran Cheng, Kang L. Wang

Publikováno v: Nature Communications, Vol 13, Iss 1, Pp 1-7 (2022)

Electrical manipulation of antiferromagnetic order is crucial for future memory devices, but existing switching schemes require a large current density. Here, the authors achieve record low current density switching in FeRh by taking advantage of its

Externí odkaz: https://doaj.org/article/20e7ce6811354c6e9d17aa44cdd4a093

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