Výsledky vyhledávání - "Chao Yang Kang"

Effect of substrate temperature on few-layer graphene grown on Al2O3 (0001) via direct carbon atoms deposition

Autor: Jun Tang, Zhongliang Liu, Chao-Yang Kang, Chongwen Zou, Wensheng Yan, Pengshou Xu

Publikováno v: Solid State Communications. 152:960-963

Few-layer graphene (FLG) was grown on Al 2 O 3 (0 0 0 1) substrates at different temperatures via direct carbon atoms deposition by using solid source molecular beam epitaxy (SSMBE) method. The structural properties were characterized by reflection h

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::25139e4d18f07cb07c5e5bf40ce4d609
https://doi.org/10.1016/j.ssc.2012.02.027

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Graphene Film Growth on Cu Foil via Direct Carbon Atoms Deposition by Using SSMBE

Autor: Le Le Fan, Chao Yang Kang, Chongwen Zou, Peng Shou Xu, Zhong Liang Liu

Publikováno v: Applied Mechanics and Materials. :241-244

Graphene film has been successfully grown on Cu foil by directly depositing carbon atoms with a solid source molecular beam epitaxy (SSMBE) system. The structural and electronic properties of the graphene sample are characterized by Raman spectroscop

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3673661745e88a26ab9ba7009446904b
https://doi.org/10.4028/www.scientific.net/amm.174-177.241

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In situ study on the electronic structure of graphene grown on 6H–SiC (0 0 0 1¯) with synchrotron radiation photoelectron spectroscopy

Autor: Li-Min Li, Shiqiang Wei, Xiangang Xu, Haibin Pan, Jun Tang, Pengshou Xu, Chao-Yang Kang, Chen Xiufang

Publikováno v: Applied Surface Science. 258:2187-2191

Low energy electron diffraction (LEED) and synchrotron radiation photoelectron spectroscopy (SRPES) were used to study the synthesis process and detailed electronic structures of graphene produced by thermal decomposition of 6H–SiC ( 0 0 0 1 ¯ ) i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2c89ac8f42a61463052daaa94143f880
https://doi.org/10.1016/j.apsusc.2011.02.068

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Graphene films grown on Si substrate via direct deposition of solid-state carbon atoms

Autor: Shiqiang Wei, Chao-Yang Kang, Wensheng Yan, Pengshou Xu, Li-Min Li, Jian-Shun Tang

Publikováno v: Physica E: Low-dimensional Systems and Nanostructures. 43:1415-1418

Graphene films were grown on Si(1 1 1) substrates at different temperatures (600, 700 and 800 °C) by directly depositing solid-state carbon atoms through solid-state molecular beam epitaxy (SSMBE). The structural properties were characterized by ref

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9beaa76bd8395290bd5d3d9e1a95f26e
https://doi.org/10.1016/j.physe.2011.03.014

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Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)

Autor: Li-Min LI, Jun TANG, Chao-Yang KANG, Guo-Qiang PAN, Wen-Sheng YAN, Shi-Qiang WEI, Peng-Shou XU

Publikováno v: Journal of Inorganic Materials. 26:472-476

利用固源分子束外延(SSMBE)技术, 在Si(111)衬底上沉积碳原子外延生长石墨烯薄膜, 通过反射式高能电子衍射(RHEED)、红外吸收谱(FTIR)、拉曼光谱(RAMAN)和X射线吸收精细结构谱(NEXAFS)等手段对不同�

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b1f83e69fb64fda09fd6da9c95f11078
https://doi.org/10.3724/sp.j.1077.2011.00472

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Scattering of SH-waves on triangular hill joined by semi-cylindrical canyon

Autor: Chao-yang Kang, Feng Han, Guang-zheng Wang

Publikováno v: Applied Mathematics and Mechanics. 32:309-326

Scattering of SH-waves on the triangular hill joined by semi-cylindrical canyon in half-space is studied using the method of complex function and moving coordinates. The model being studied is divided into two domains. The wave functions satisfying t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0708ac1909c4098ba0e162d6e2c0b14a
https://doi.org/10.1007/s10483-011-1417-7

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Graphene films grown on sapphire substrates via solid source molecular beam epitaxy

Autor: Shiqiang Wei, Pengshou Xu, Li-Min Li, Zhong-Liang Liu, Wensheng Yan, Jun Tang, Chao-Yang Kang

Publikováno v: Chinese Physics B. 21:057303

A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy (SSMBE) equipment was presented. The structural and electronic properties of the sam

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b4deb33ce3ac24ea4dae5cc1f59f65d6
https://doi.org/10.1088/1674-1056/21/5/057303

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Growth of Few-Layer Graphene on Sapphire Substrates by Directly Depositing Carbon Atoms

Autor: Jun Tang, Chao-Yang Kang, Wensheng Yan, Li-Min Li, Zhongliang Liu, Pengshou Xu, Shiqiang Wei

Publikováno v: Chinese Physics Letters. 28:118101

Few-layer graphene (FLG) is successfully grown on sapphire substrates by directly depositing carbon atoms at the substrate temperature of 1300°C in a molecular beam epitaxy chamber. The reflection high energy diffraction, Raman spectroscopy and near

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5677125ce34c9d094d00071c510a2af5
https://doi.org/10.1088/0256-307x/28/11/118101

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Graphene Grown on Sapphire Surface by Using SiC Buffer Layer with SSMBE

Autor: Jian-Shun Tang, Haibin Pan, Li-Min Li, Chao-Yang Kang, Pengshou Xu, Shiqiang Wei, Wensheng Yan

Publikováno v: Physics Procedia. :880-884

Graphene layer is successfully grown on insulated sapphire substrate through depositing a SiC buffer layer and annealing at high temperature with solid source molecular beam epitaxy (SSMBE). The structural properties of the epitaxial graphene layer a

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