Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Chao‐Yao Yang"'
Publikováno v:
Materials, Vol 17, Iss 16, p 3933 (2024)
Transition metal dichalcogenide (TMD) monolayers exhibit unique valleytronics properties due to the dependency of the coupled valley and spin state at the hexagonal corner of the first Brillouin zone. Precisely controlling valley spin-polarization vi
Externí odkaz:
https://doaj.org/article/ffce2c719cf74c1fbc8854f25938590a
Publikováno v:
Materials Research Letters, Vol 11, Iss 5, Pp 305-326 (2023)
ABSTRACTNeuromorphic computing based on brain-inspired frameworks has shown its potential to perform computation with remarkable power and speed efficiency. The spintronic device has been considered a promising candidate for neuromorphic computing be
Externí odkaz:
https://doaj.org/article/b0154350b2dd4294bd5d1d1c55a40f82
Autor:
Ssu‐Yuan Wang, Sheng‐Huai Chen, Hao‐Kai Chang, Yi‐Ting Li, Chih‐Hsiang Tseng, Po‐Chuan Chen, Chao‐Yao Yang, Chih‐Huang Lai
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 12, Pp n/a-n/a (2023)
Abstract Antiferromagnet (AFM) has currently participated in the spin‐orbit torque (SOT) technology due to its great potential to be applied to the field‐free SOT switching and to promote the thermal stability of MRAM. However, the effect of vary
Externí odkaz:
https://doaj.org/article/9be97c0549a144c785a271bf15ab9512
Autor:
Nathan D. Arndt, Eitan Hershkovitz, Labdhi Shah, Kristoffer Kjærnes, Chao-Yao Yang, Purnima P. Balakrishnan, Mohammed S. Shariff, Shaun Tauro, Daniel B. Gopman, Brian J. Kirby, Alexander J. Grutter, Thomas Tybell, Honggyu Kim, Ryan F. Need
Publikováno v:
Materials, Vol 17, Iss 5, p 1188 (2024)
The effect of oxygen reduction on the magnetic properties of LaFeO3−δ (LFO) thin films was studied to better understand the viability of LFO as a candidate for magnetoionic memory. Differences in the amount of oxygen lost by LFO and its magnetic b
Externí odkaz:
https://doaj.org/article/52bf8da69fd2477db92dd65f9df724bb
Autor:
Guang-Yang Su, Min-Chang You, Kai-Wei Chuang, Ming-Hsuan Wu, Cheng-Hsun Hsieh, Chun-Yen Lin, Chao-Yao Yang, Aswin kumar Anbalagan, Chih-Hao Lee
Publikováno v:
Nanomaterials, Vol 13, Iss 24, p 3154 (2023)
This study investigates the crystal structure, epitaxial relation, and magnetic properties in CoFe thin films deposited on a flexible mica substrate. The epitaxial growth of CoFe thin films was successfully achieved by DC magnetron sputtering, formin
Externí odkaz:
https://doaj.org/article/4953b5f2b1114cf3bca7dbf4eafbd732
Autor:
Hao Wu, Hantao Zhang, Baomin Wang, Felix Groß, Chao-Yao Yang, Gengfei Li, Chenyang Guo, Haoran He, Kin Wong, Di Wu, Xiufeng Han, Chih-Huang Lai, Joachim Gräfe, Ran Cheng, Kang L. Wang
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-7 (2022)
Electrical manipulation of antiferromagnetic order is crucial for future memory devices, but existing switching schemes require a large current density. Here, the authors achieve record low current density switching in FeRh by taking advantage of its
Externí odkaz:
https://doaj.org/article/20e7ce6811354c6e9d17aa44cdd4a093
Publikováno v:
Materials Research Letters. 11:305-326
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0294d8add32a2fc81456428a797b6880
https://doi.org/10.1080/21663831.2022.2147803
https://doi.org/10.1080/21663831.2022.2147803
Autor:
Hao Wu, Deniz Turan, Quanjun Pan, Chao-Yao Yang, Guanjie Wu, Seyed Armin Razavi, Bingqian Dai, Nezih Tolga Yardimci, Zhi Huang, Jing Zhang, Yi-Ying Chin, Hong-Ji Lin, Chih-Huang Lai, Zongzhi Zhang, Mona Jarrahi, Kang L. Wang
Publikováno v:
Physical Review Applied. 18
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74c8a20f09dcbb795cc6ea81abeb7e4f
https://doi.org/10.1103/physrevapplied.18.064012
https://doi.org/10.1103/physrevapplied.18.064012
Publikováno v:
Applied Surface Science. 457:529-535
CoFeB/MgO-based magnetic tunnel junctions (MTJs) have considerable potential in magnetic random access memory (MRAM), thanks to their tunable perpendicular magnetic anisotropy (PMA). We found significant reduction of dead-layer by inserting additiona
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02d21570af9d2b59a405b561cc6442c7
https://doi.org/10.1016/j.apsusc.2018.06.292
https://doi.org/10.1016/j.apsusc.2018.06.292
Autor:
Peng Deng, Xiaoyu Che, William Ratcliff, Hao Wu, Alexander J. Grutter, Elke Arenholz, Lei Pan, Kang L. Wang, Chao Yao Yang, Haiying Wang, Dustin A. Gilbert, Qing Lin He, Padraic Shafer, Gen Yin, Yingying Wu, Julie A. Borchers
Publikováno v:
Science advances, vol 6, iss 33
Science Advances
Science Advances
Atomic termination plays a key role in activating the proximity effect of antiferromagnet.
This work reports the ferromagnetism of topological insulator, (Bi,Sb)2Te3 (BST), with a Curie temperature of approximately 120 K induced by magnetic prox
This work reports the ferromagnetism of topological insulator, (Bi,Sb)2Te3 (BST), with a Curie temperature of approximately 120 K induced by magnetic prox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c1a2c32a624868ddb60050c4cb694a2a
https://escholarship.org/uc/item/51w7m483
https://escholarship.org/uc/item/51w7m483
