Integrated SiN on SOI dual photonic devices for advanced datacom solutions Integrated SiN on SOI dual photonic devices for advanced datacom solutions

Autor: Guerber, Sylvain, Alonso-Ramos, Carlos, Benedikovic, Daniel, Perez-Galacho, Diego, Le Roux, Xavier, Vulliet, Nathalie, Cremer, Sébastien, Babaud, Laurene, Planchot, Jonathan, Benoit, Daniel, Chantraine, Paul, Leverd, François, Ristoiu, Delia, Grosse, Philippe, Marris-Morini, Delphine, Vivien, Laurent, Baudot, Charles, Boeuf, Frédéric

Publikováno v: Silicon Photonics: From Fundamental Research to Manufacturing
SPIE Photonics Europe, Silicon Photonics: From Fundamental Research to Manufacturing
SPIE Photonics Europe, Silicon Photonics: From Fundamental Research to Manufacturing, May 2018, Strasbourg, France. ⟨10.1117/12.2306160⟩

International audience; We report on the co-integration of an additional passive layer within a Silicon Photonic chip for advanced passive devices. Being a CMOS compatible material, Silicon Nitride (SiN) appears as an attractive candidate. With a mod

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2d18bd9478fbc2360e40218f3583c0be
https://hal.science/hal-02927100/document

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