Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Chantal Arena"'
Autor:
Heather McFavilen, Ehsan Vadiee, Fernando Ponce, Alec M. Fischer, Steven Young, Ding Ding, Joshua J. Williams, Stephen M. Goodnick, Chantal Arena, Christiana B. Honsberg
Publikováno v:
IEEE Journal of Photovoltaics. 7:1646-1652
In $_{x}$ Ga1− $_{x}$ N solar cells are ideal for use in extreme temperature applications due to their wide band gap and chemical stability. In this paper, the details are given for the growth, fabrication, and characterization of In $_{x}$ Ga1−
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::190c9b6824c2ececb9cd9b95f4014b33
https://doi.org/10.1109/jphotov.2017.2756057
https://doi.org/10.1109/jphotov.2017.2756057
Autor:
Shuo Wang, Heather McFavilen, Fernando Ponce, Shirong Zhao, Srabanti Chowdhury, Chantal Arena, Stephen M. Goodnick
Publikováno v:
Journal of Electronic Materials. 45:2087-2091
We report on the temperature-dependent contact resistivity and high-temperature stability of the annealed Ni/Au ohmic contacts to p-type GaN in air. As the measure temperature increases from 25°C to 390°C, both the specific contact resistivity (ρc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f95db4774b3f6200d186a0049e9ff1a8
https://doi.org/10.1007/s11664-015-4278-3
https://doi.org/10.1007/s11664-015-4278-3
Autor:
Christiana B. Honsberg, Heather McFavilen, William A. Doolittle, Stephen M. Goodnick, Evan A. Clinton, Chantal Arena, Alec M. Fischer, Ehsan Vadiee
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
the effects of the number of quantum wells (QWs), quantum barrier (QB) thickness, and the operating temperature (up to 500 °C) on the In 0.12 Ga 0.88 N/GaN multi-quantum well solar cell performance are studied via DC and small signal AC analysis. Ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f44d9c1258044474e0eee6855907992
https://doi.org/10.1109/pvsc.2018.8548253
https://doi.org/10.1109/pvsc.2018.8548253
Autor:
Ehsan Vadiee, Zachary Engel, Stephen M. Goodnick, Christopher M. Matthews, Heather McFavilen, Christiana B. Honsberg, Chantal Arena, William A. Doolittle, Evan A. Clinton
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
InGaN/GaN multi-quantum well solar cells with highly-doped GaN p-n homo tunnel junction contacts are grown with a hybrid method where the active regions were grown with metal organic chemical vapor deposition and the TJ contacts were grown by plasma-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45b0d012d72f922bdec1575bbf430188
https://doi.org/10.1109/pvsc.2018.8547327
https://doi.org/10.1109/pvsc.2018.8547327
Autor:
Alec M. Fischer, Fernando Ponce, Chantal Arena, William A. Doolittle, Ehsan Vadiee, Richard R. King, Arshey Patadia, Evan A. Clinton, Christiana B. Honsberg, Heather McFavilen
Publikováno v:
Japanese Journal of Applied Physics. 58:101003
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::229bce893fd1bcb252fe61270fb36473
https://doi.org/10.7567/1347-4065/ab3b66
https://doi.org/10.7567/1347-4065/ab3b66
Autor:
Joe V. Carpenter, Zachary C. Holman, Chantal Arena, Evan A. Clinton, Christiana B. Honsberg, W. Alan Doolittle, Ehsan Vadiee, Heather McFavilen
Publikováno v:
Journal of Applied Physics. 126:083110
GaN p++/n++ tunnel junctions (TJs) with heavy bulk or delta Mg doping at the junction were grown via molecular beam epitaxy with a hysteresis-free and repeatable negative differential resistance (NDR). The TJ with Mg doping of 5.5 × 1020 cm−3 show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d209d46925d9222e3197cd9bfa551bc5
https://doi.org/10.1063/1.5112498
https://doi.org/10.1063/1.5112498
Autor:
Heather McFavilen, Alec M. Fischer, Ehsan Vadiee, Steven Young, Fernando Ponce, Ding Ding, Christiana B. Honsberg, Chantal Arena, Joshua J. Williams, Stephen M. Goodnick
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc005f1b729bc28126360832fe587f89
https://doi.org/10.1109/pvsc.2016.7749576
https://doi.org/10.1109/pvsc.2016.7749576
Autor:
Alex S. Weidenbach, Christiana B. Honsberg, Chantal Arena, Christopher M. Matthews, Evan A. Clinton, W. Alan Doolittle, Heather McFavilen, Ehsan Vadiee, Zachary Engel, Chaomin Zhang, Richard R. King
Publikováno v:
Applied Physics Express. 11:082304
Highly doped GaN p–n tunnel junction (TJ) contacts to InGaN solar cells are demonstrated, in which the TJs were grown by molecular beam epitaxy on top of active solar cell regions grown by metalorganic chemical vapor deposition. The effects of Si a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b01be13f79cdff7008db077610b6e070
https://doi.org/10.7567/apex.11.082304
https://doi.org/10.7567/apex.11.082304
Autor:
T.N.D. Tibbits, Thomas Hannappel, Michael Schachtner, Marc Steiner, Maike Wiesenfarth, Eckart Gerster, Andreas W. Bett, Nicolas Blanc, E. Oliva, Thomas Signamarcheix, A. Wekkeli, Thierry Salvetat, M. Piccin, Gerald Siefer, Frank Dimroth, Jocelyne Wasselin, Christian Karcher, Chantal Arena, Aurélie Tauzin, Rainer Krause, Paul Beutel, Eric Guiot, Charlotte Drazek, Miguel Munoz Rico
Publikováno v:
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
The next generation of multi-junction concentrator solar cells will have to reach higher efficiencies than today's devices. At the same time these solar cells must be reliable in the field, be manufacturable with good yield and at sufficiently low co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1eb180464d5d38ca91be03fc8f62b53
https://doi.org/10.1109/pvsc.2014.6924947
https://doi.org/10.1109/pvsc.2014.6924947
Publikováno v:
Microscopy Microanalysis Microstructures. 1:175-187
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb085dcf5bc89f37702e41c6983d0ad7
https://doi.org/10.1051/mmm:0199000103017500
https://doi.org/10.1051/mmm:0199000103017500