Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Chankeun Kwon"'
Autor:
Wanik Cho, Jongseok Jung, Jongwoo Kim, Junghoon Ham, Sangkyu Lee, Yujong Noh, Dauni Kim, Wanseob Lee, Kayoung Cho, Kwanho Kim, Heejoo Lee, Sooyeol Chai, Eunwoo Jo, Hanna Cho, Jong-Seok Kim, Chankeun Kwon, Cheolioona Park, Hveonsu Nam, Haeun Won, Taeho Kim, Kyeonghwan Park, Sanghoon Oh, Jinhyun Ban, Junyoung Park, Jaehyeon Shin, Taisik Shin, Junseo Jang, Jiseong Mun, Jehyun Choi, Hyunseung Choi, Suna-Wook Choi, Wonsun Park, Dongkvu Yoon, Minsu Kim, Junvoun Lim, Chiwook An, Hyunyoung Shirr, Haesoon Oh, Haechan Park, Sungbo Shim, Hwang Huh, Honasok Choi, Seungpil Lee, Jaesuna Sim, Kichana Gwon, Jumsoo Kim, Woopyo Jeong, Jungdal Choi, Kyo-Won Jin
Publikováno v:
2022 IEEE International Solid- State Circuits Conference (ISSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d26dc3c61a3840646dbee3c4b8ab0fa8
https://doi.org/10.1109/isscc42614.2022.9731785
https://doi.org/10.1109/isscc42614.2022.9731785
Autor:
Kangwoo Park, Kwanho Kim, Cheoljoong Park, Kayoung Cho, Kun-Ok Ahn, Chankeun Kwon, Jong Woo Kim, Hyun Chul Lee, Hyunseok Song, Heonki Kirr, Sunghwa Ok, Yongsoon Park, Juhyeong Lee, Sooyeol Chai, Hyeonsu Nam, Heejoo Lee, Tae-Sung Jung, Sang Kyu Lee, Jayoon Goo, Hwang Huh, Woopyo Jeong, Kangwook Jo, Geonu Kim, Yujin Yang, Jangwon Park, Chanhui Jeong, Yujong Noh, Hanna Cho, Wanik Cho, Jinhaeng Lee
Publikováno v:
ISSCC
Ever since a 3b/cell (TLC) NAND Flash memory became the mainstream in nonvolatile memory market, a new demand for a 4b/cell (QLC) NAND flash memory has been emerging for low-cost applications. However, QLC has inherently much longer page program time
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6a679fe1900f224843b7509806b7dc0
https://doi.org/10.1109/isscc19947.2020.9063117
https://doi.org/10.1109/isscc19947.2020.9063117
Autor:
Hyeonseok Hwang, Chan-Hui Jeong, Chankeun Kwon, Hoonki Kim, Youngmok Jeong, Bumsoo Lee, Soo-Won Kim
Publikováno v:
2012 IEEE International Conference on Electron Devices & Solid State Circuit (EDSSC); 2012, p1-2, 2p