Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Chanjong Ju"'
Publikováno v:
APL Materials, Vol 3, Iss 7, Pp 076107-076107-7 (2015)
We investigated the electronic transport properties of epitaxial SnO2−x thin films on r-plane sapphire substrates. The films were grown by pulsed laser deposition technique and its epitaxial growth direction was [101] and the in-plane alignment was
Externí odkaz:
https://doaj.org/article/939a52933e0e48b495815dc05c466c14
Autor:
Useong Kim, Chulkwon Park, Taewoo Ha, Young Mo Kim, Namwook Kim, Chanjong Ju, Jisung Park, Jaejun Yu, Jae Hoon Kim, Kookrin Char
Publikováno v:
APL Materials, Vol 3, Iss 3, Pp 036101-036101-7 (2015)
We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO3 and LaInO3. We have developed epitaxial LaInO3 as the gate oxide on top of BaSnO3, which were recently reported
Externí odkaz:
https://doaj.org/article/29279566b28b4b8b96c8e52ac3df46fa
Publikováno v:
Current Applied Physics. 16:300-304
We report on the electrical properties of SnO x thin films made by reactive sputtering of a Sn metal target and the performance of their field effect transistors with HfO x gate insulator on glass substrates. We investigated the electrical properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85b9f35ce1b17039c40a0c6e2b1f72e0
https://doi.org/10.1016/j.cap.2015.12.015
https://doi.org/10.1016/j.cap.2015.12.015
Autor:
Eva Pavarini, N. Egetenmeyer, Yoshinori Tokura, John L. Sarrao, Tai Hoon Kim, Evgeny Gorelov, Keisuke Shibuya, Claude Ederer, Hyung J. Kim, Myung-Hwan Whangbo, Useong Kim, Simon Gerber, Chanjong Ju, Etienne Janod, Michel Kenzelmann, Masashi Kawasaki, Cristian Vaju, Vincent Guiot, E. Dorolti, Masaki Nakano, Byung-Gu Jeon, Hoon Kim, Jorge L. Gavilano, Joe D. Thompson, Laurent Cario, Roman Kovacik, Benoit Corraze, Roman Movshovich, Daisuke Okuyama, M. A. N. Araújo, J. M. P. Carmelo, Christof Niedermayer, Kee Hoon Kim, Andrea Bianchi, Eric Ressouche, Takafumi Hatano, Erik Koch, Woong-Jhae Lee, Guoren Zhang, Shimpei Ono, Eric D. Bauer, Kookrin Char, Hyun-Joo Koo, S. W. White, E. Kan, Kwang Taek Hong, Hyo Sik Mun, Yoshihiro Iwasa, Philipp Werner
Publikováno v:
Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17 to 20 2012, Aachen, Germany
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95659d9f9efc4f9c59e8266b1c2b5d14
https://doi.org/10.1002/9783527667703.ch33
https://doi.org/10.1002/9783527667703.ch33
Autor:
Byung-Gu Jeon, Hyung Joon Kim, Hyo Sik Mun, Kee Hoon Kim, Chanjong Ju, Useong Kim, Tai Hoon Kim, Kookrin Char, Kwang Taek Hong, Hoon Kim, Woong-Jhae Lee
We discovered that La-doped BaSnO3 with the perovskite structure has an unprecedentedly high mobility at room temperature while retaining its optical transparency. In single crystals, the mobility reached 320 cm^2(Vs)^-1 at a doping level of 8x10^19
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::793ffa4dd72a08d4bee277f16bbe7aff
http://arxiv.org/abs/1204.6702
http://arxiv.org/abs/1204.6702
Publikováno v:
APL Materials; 2015, Vol. 3 Issue 7, p1-7, 7p
Autor:
Useong Kim, Chulkwon Park, Taewoo Ha, Young Mo Kim, Namwook Kim, Chanjong Ju, Jisung Park, Jaejun Yu, Jae Hoon Kim, Kookrin Char
Publikováno v:
APL Materials; 2015, Vol. 3 Issue 3, p1-7, 7p
Publikováno v:
Applied Physics Express; Jan2016, Vol. 9 Issue 1, p1-1, 1p
Publikováno v:
Applied Physics Express (APEX); January 2016, Vol. 9 Issue: 1 p011201-011201, 1p