Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Changzhou Wang"'
Publikováno v:
Emergency Management Science and Technology, Vol 4, Iss 1, Pp 1-6 (2024)
Since the corrosion defects in gas pipelines have similar corrosion characteristics to the surrounding soil, the random growth of these defects may be correlated, so we can not simply treat the corrosion defects as completely correlated or independen
Externí odkaz:
https://doaj.org/article/f386b22694f84f6e872fd3d1a4914da5
Publikováno v:
Journal of The Institution of Engineers (India): Series C. 101:693-702
In this work, the hot rolling process of 17 vol% SiCp/2009Al composite was simulated using the fully coupled thermal stress analysis in Abaqus/Explicit. The effect of technological parameters on the temperature, equivalent strain rate and rolling for
The improvement of nitrogen doped Ge 2 Sb 2 Te 5 on the phase change memory resistance distributions
Autor:
Nanfei Zhu, Yanghui Xiang, Bo Liu, Zhitang Song, Dan Gao, Zhonghua Zhang, Zhen Xu, Jiadong Ren, Yipeng Zhan, Yifeng Chen, Songlin Feng, Changzhou Wang, Heng Wang
Publikováno v:
Solid-State Electronics. 116:119-123
In this paper, the performance of Ge2Sb2Te5 (GST) and nitrogen doped Ge2Sb2Te5 (NGST) have been investigated based on standard 40 nm complementary metal–oxide–semiconductor (CMOS) technology. It shows a larger margin (∼2 orders) between SET and
Autor:
Yangyang Xia, Yifeng Chen, Dan Gao, Yipeng Zhan, Changzhou Wang, Bo Liu, Heng Wang, Jiadong Ren, Zhen Xu, Nanfei Zhu, Zhitang Song
Publikováno v:
ECS Solid State Letters. 4:P105-P108
Publikováno v:
Journal of Applied Physics; 2014, Vol. 115 Issue 20, p204303-1-204303-5, 5p
Publikováno v:
Applied Surface Science. 316:286-291
By nanocompositing Ge2Sb2Te5 and SnSe2, the electrical and thermal proprieties of Ge2Sb2Te5/SnSe2 multilayer films for phase change random access memory (PCRAM) are better than those of Ge2Sb2Te5 films. The crystallization temperature rises and can b
Publikováno v:
Applied Surface Science. 257:6296-6299
The reliability characteristics and thermal conductivity of Ga 30 Sb 70 /Sb 80 Te 20 nanocomposite multilayer films were investigated by isothermal resistance and transient thermoreflectance (TTR) measurements, respectively. The crystallization tempe
Publikováno v:
Current Applied Physics. 11:S345-S348
Phase transition behaviors of Ga 30 Sb 70 /Sb 80 Te 20 nanocomposite multilayer films were investigated for potential use in phase change random access memory (PCRAM). The temperature dependence of sheet resistance measurements were employed to study
Publikováno v:
Scripta Materialia. 64:645-648
The crystallization temperatures of SiO 2 /Sb 80 Te 20 nanocomposite multilayer films can be modulated by varying the layer thicknesses of SiO 2 and Sb 80 Te 20 . The reversible phase transition between amorphous and crystalline states can be achieve
Publikováno v:
Ferroelectrics. 410:152-158
The phase change characteristics of nitrogen doping Sb2Te3 thin films were investigated by in situ film resistance measurements. The crystallization temperature and activation energy for crystallization of thin films increased with the increase of ni