Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Changyong Oh"'
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-9 (2023)
Abstract Top gate a-InGaZnO (IGZO) thin-film transistors (TFTs) annealed at high temperature show excellent initial current–voltage (I–V) characteristics. However, when they are exposed to positive gate bias for a long time, hump can occur in the
Externí odkaz:
https://doaj.org/article/02b12d09b31e4f6f9b380c19d111ca0d
Autor:
Changyong Oh, Taehyeon Kim, Myeong Woo Ju, Min Young Kim, So Hee Park, Geon Hyeong Lee, Hyunwuk Kim, SeHoon Kim, Bo Sung Kim
Publikováno v:
Materials, Vol 16, Iss 18, p 6161 (2023)
The effect of the channel interface of top-gate InGaZnO (IGZO) thin film transistors (TFTs) on the electrical properties caused by exposure to various wet chemicals such as deionized water, photoresist (PR), and strippers during the photolithography
Externí odkaz:
https://doaj.org/article/5135ce88aefc41a097eb7d36b9e25c0b
Autor:
Hyojung Kim, Jongwoo Park, Sora Bak, Jungmin Park, Changwoo Byun, Changyong Oh, Bo Sung Kim, Chanhee Han, Jongmin Yoo, Dongbhin Kim, Jangkun Song, Pyungho Choi, Byoungdeog Choi
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Abstract Flexible displays on a polyimide (PI) substrate are widely regarded as a promising next-generation display technology due to their versatility in various applications. Among other bendable materials used as display panel substrates, PI is es
Externí odkaz:
https://doaj.org/article/c4c6ba3e77ca44da8f624dbeb4fd4a2b
Publikováno v:
AIP Advances, Vol 11, Iss 11, Pp 115126-115126-8 (2021)
Silicon dioxide (SiO2) thin films were prepared by plasma-enhanced atomic layer deposition (PEALD) at a low temperature of 150 °C using di-isopropylaminosilane and oxygen with different plasma times. While SiO2 films deposited with a short plasma ti
Externí odkaz:
https://doaj.org/article/3a9ca9665e6e4962a7ae43f995a4b659
Autor:
Hyojung Kim, Soonkon Kim, Jongmin Yoo, Changyong Oh, Bosung Kim, Hyuncheol Hwang, Jungmin Park, Pyungho Choi, Jangkun Song, Kiju Im, Byoungdeog Choi
Publikováno v:
AIP Advances, Vol 11, Iss 3, Pp 035312-035312-5 (2021)
In this paper, the dependence of threshold voltage (Vth) changes to amorphous-indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) under positive bias light illumination (PBIS) on the height of the conduction band offset was studied. Using
Externí odkaz:
https://doaj.org/article/0c99a7a58f9b4b879b3c4e2ccf27ad2c
Autor:
Yonmo Sung, Seungtae Kim, Byunghwa Jang, Changyong Oh, Taeyun Jee, Soonil Park, Kwansic Park, Siyoul Chang
Publikováno v:
Energies, Vol 14, Iss 6, p 1599 (2021)
In this study, a series of experiments were conducted on a testing facility and a real-scale furnace, for analyzing the nitric oxide (NO) emission reduction. The effects of the temperature, oxygen concentration, and amount of secondary combustion air
Externí odkaz:
https://doaj.org/article/35d316b296ad4bb7bc5abc01c467f142
Publikováno v:
Ceramics International. 48:9817-9823
Autor:
Changwoo Byun, Sora Bak, Jongmin Yoo, Chanhee Han, Byoungdeog Choi, Hyo-Jung Kim, Jang-Kun Song, Jongwoo Park, Jungmin Park, Bo Sung Kim, Pyungho Choi, Changyong Oh, Dongbhin Kim
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Scientific Reports
Scientific Reports
Flexible displays on a polyimide (PI) substrate are widely regarded as a promising next-generation display technology due to their versatility in various applications. Among other bendable materials used as display panel substrates, PI is especially
Autor:
Hyo Jung Kim, Byoungdeog Choi, Changyong Oh, Bosung Kim, Pyungho Choi, Jungmin Park, Bohyeon Jeon, Jongyoon Lee
Publikováno v:
Electronic Materials Letters. 17:299-306
This study investigated the electrical and stability characteristics of Al2O3 as a gate insulator, which was deposited by various atomic layer deposition methods in top-gate staggered amorphous InGaZnO (a-IGZO) thin film transistors. A trimethylalumi
Publikováno v:
AAAI
AAAI-20, IAAI-20, EAAI-20 proceedings: Thirty-Fourth AAAI Conference on Artificial Intelligence, Thirty-Second Conference on Innovative Applications of Artificial Intelligence, The Tenth Symposium on Educational Advances in Artificial Intelligence : February 7–12th, 2020, New York Hilton Midtown, New York, New York, USA, 4, 5298-5305
The Thirty-Fourth AAAI Conference on Artificial Intelligence, the Thirty-Second Conference on Innovative Applications of Artificial Intelligence, the Tenth Symposium on Educational Advances in Artificial Intelligence
AAAI-20, IAAI-20, EAAI-20 proceedings: Thirty-Fourth AAAI Conference on Artificial Intelligence, Thirty-Second Conference on Innovative Applications of Artificial Intelligence, The Tenth Symposium on Educational Advances in Artificial Intelligence : February 7–12th, 2020, New York Hilton Midtown, New York, New York, USA, 4, 5298-5305
The Thirty-Fourth AAAI Conference on Artificial Intelligence, the Thirty-Second Conference on Innovative Applications of Artificial Intelligence, the Tenth Symposium on Educational Advances in Artificial Intelligence
We propose a new variational family for Bayesian neural networks. We decompose the variational posterior into two components, where the radial component captures the strength of each neuron in terms of its magnitude; while the directional component c