Zobrazeno 1 - 10
of 101
pro vyhledávání: '"Changyong Lan"'
Autor:
Yuxuan Zhang, You Meng, Liqiang Wang, Changyong Lan, Quan Quan, Wei Wang, Zhengxun Lai, Weijun Wang, Yezhan Li, Di Yin, Dengji Li, Pengshan Xie, Dong Chen, Zhe Yang, SenPo Yip, Yang Lu, Chun-Yuen Wong, Johnny C. Ho
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract High synthesis temperatures and specific growth substrates are typically required to obtain crystalline or oriented inorganic functional thin films, posing a significant challenge for their utilization in large-scale, low-cost (opto-)electro
Externí odkaz:
https://doaj.org/article/21897571f8f249d69ff1d434ff3a2635
Autor:
Yiduo Wang, Yingwei Wang, Changyong Lan, Li Zhou, Jianlong Kang, Wanxin Zheng, Tianyu Xue, Yejun Li, Xiaoming Yuan, Si Xiao, Heping Li, Jun He
Publikováno v:
Advanced Science, Vol 11, Iss 12, Pp n/a-n/a (2024)
Abstract Interlayer charge‐transfer (CT) in 2D atomically thin vertical stacks heterostructures offers an unparalleled new approach to regulation of device performance in optoelectronic and photonics applications. Despite the fact that the saturabl
Externí odkaz:
https://doaj.org/article/335c26e381c0451aa2e7d90823033560
Autor:
Rui Zhang, Jie Lin, Tao He, Jiafang Wu, Zhuojun Yang, Liwen Liu, Shaofeng Wen, Yimin Gong, Haifeng Lv, Jing Zhang, Yi Yin, Fangjia Li, Changyong Lan, Chun Li
Publikováno v:
InfoMat, Vol 6, Iss 1, Pp n/a-n/a (2024)
Abstract Two‐dimensional transition metal dichalcogenides (TMDs) are needed in high‐performance piezoresistive sensors due to their strong strain‐induced bandgap modification and thereby large gauge factors. However, integrating a conventional
Externí odkaz:
https://doaj.org/article/8dca1f108acb43a7a2fd026c90ff307c
Autor:
You Meng, Xiaocui Li, Xiaolin Kang, Wanpeng Li, Wei Wang, Zhengxun Lai, Weijun Wang, Quan Quan, Xiuming Bu, SenPo Yip, Pengshan Xie, Dong Chen, Dengji Li, Fei Wang, Chi-Fung Yeung, Changyong Lan, Chuntai Liu, Lifan Shen, Yang Lu, Furong Chen, Chun-Yuen Wong, Johnny C. Ho
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-14 (2023)
Abstract Chemical bonds, including covalent and ionic bonds, endow semiconductors with stable electronic configurations but also impose constraints on their synthesis and lattice-mismatched heteroepitaxy. Here, the unique multi-scale van der Waals (v
Externí odkaz:
https://doaj.org/article/2aa467cb48f147d49aebb1efa9700e88
Publikováno v:
Applied Sciences, Vol 13, Iss 19, p 11037 (2023)
Two-dimensional (2D) materials have gained significant attention owing to their exceptional electronic and optoelectronic properties, including high carrier mobility, strong light–matter interaction, layer-dependent band structure and band gap. The
Externí odkaz:
https://doaj.org/article/8feb6fab9b2a4d5db2f149e26060c50a
Autor:
Dapan Li, Changyong Lan, Arumugam Manikandan, SenPo Yip, Ziyao Zhou, Xiaoguang Liang, Lei Shu, Yu-Lun Chueh, Ning Han, Johnny C. Ho
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-10 (2019)
The application of ternary nanowires (NWs) in optoelectronics has been hindered by difficulties in producing high quality NWs on silicon substrates. Here, the authors report on InxGa1-xSb NWs exhibiting simultaneously high hole mobility, responsivity
Externí odkaz:
https://doaj.org/article/cc465125cc4343f8a77c842cd50e2f05
Autor:
Rui Zhang, Qiusong Zhang, Xinyu Jia, Shaofeng Wen, Haolun Wu, Yimin Gong, Yi Yin, Changyong Lan, Chun Li
Publikováno v:
Nanotechnology.
Atomically thin narrow-bandgap layered PdSe2 has attracted much attention due to its rich and unique electrical properties. For silicon-compatible device integration, direct wafer-scale preparation of high-quality PdSe2 thin film on a silicon substra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90eb3d42dc9e7a9bba26594bf4eb5cdd
https://doi.org/10.1088/1361-6528/acd855
https://doi.org/10.1088/1361-6528/acd855
Autor:
Dengji Li, You Meng, Yuxuan Zhang, Pengshan Xie, Zixin Zeng, Wei Wang, Zhengxun Lai, Weijun Wang, Sai‐Wing Tsang, Fei Wang, Chuntai Liu, Changyong Lan, SenPo Yip, Johnny C. Ho
Publikováno v:
Advanced Functional Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e245b5a0785d55fe40c15729152aefad
https://doi.org/10.1002/adfm.202302866
https://doi.org/10.1002/adfm.202302866
Publikováno v:
Journal of Physics D: Applied Physics. 56:234002
Cobalt was chosen as the doping element for BiFeO3 (BFO), and pure BFO and a series of BiFe1−x Co x O3 (x = 0.03, 0.05, 0.07, 0.09) nanoparticles, correspondingly labeled as nBFCO (n = 3, 5, 7, 9), were successfully prepared and investigated based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c076abc819f871b5bb65519cd0910ad8
https://doi.org/10.1088/1361-6463/acc4d6
https://doi.org/10.1088/1361-6463/acc4d6
Publikováno v:
Journal of Materials Chemistry C. 9:3846-3853
Photodetectors based on two-dimensional/three-dimensional (2D/3D) semiconducting heterostructures have attracted tremendous attention in recent years due to their novel performance. Here, we found that the photodetection performance of the graphene (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcbf1b4d09d3b37dad39b4104a665e8c
https://doi.org/10.1039/d0tc05796g
https://doi.org/10.1039/d0tc05796g