Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Changsup Ryu"'
Autor:
null Changsup Ryu, null Kee-Won Kwon, A.L.S. Loke, null Haebum Lee, T. Nogami, V.M. Dubin, R.A. Kavari, G.W. Ray, S.S. Wong
Publikováno v:
IEEE Transactions on Electron Devices. 46:1113-1120
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca9de0e7c11908ae698d6769080c1ef9
https://doi.org/10.1109/16.766872
https://doi.org/10.1109/16.766872
Publikováno v:
Materials Chemistry and Physics. 41:229-233
The reliability issues of chemically vapor deposited copper interconnections for applications in integrated circuits are discussed. The void-free conformal deposition of copper films into high aspect ratio trenches and via holes is demonstrated. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4339b03226b57568377367042349c1e
https://doi.org/10.1016/0254-0584(95)80034-4
https://doi.org/10.1016/0254-0584(95)80034-4
Publikováno v:
Applied Physics Letters. 71:3069-3071
Crystallographic orientations between thin-sputtered Cu film and β-Ta adhesion layer have been studied using high resolution electron microscopy and electron diffraction. Tetragonal β-Ta deposited on SiO2 has a strong texture with its closest packe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2e4003e9863755e72646ed52d1bf921
https://doi.org/10.1063/1.119439
https://doi.org/10.1063/1.119439
Publikováno v:
IEEE Electron Device Letters. 17:549-551
We quantified the drift of Cu ions into various PECVD dielectrics by measuring shifts in capacitance-voltage behavior after subjecting Cu-gate MOS capacitors to bias-temperature stress. At a field of 1.0 MV/cm and temperature of 100/spl deg/C, Cu ion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f4a6d0980070036f5786eff0403531e
https://doi.org/10.1109/55.545766
https://doi.org/10.1109/55.545766
Publikováno v:
Proceedings of IEEE International Electron Devices Meeting.
CVD Cu, which is both highly conductive and reliable, has been investigated as an interconnection material. Cu/sup 1+/ (hfac)(tmvs) is the precursor used in this work. Excellent conformality, which is required for reliable high aspect ratio buried in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eebfc345a2bb2b8feffbdfcbd41c119f
https://doi.org/10.1109/iedm.1993.347355
https://doi.org/10.1109/iedm.1993.347355
Publikováno v:
International Electron Devices Meeting. Technical Digest.
This paper presents a physical model for planar spiral inductors on silicon. The model has been confirmed with measured and published data of inductors having different geometric and process parameters. This model is scalable with inductor geometry,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d7c77ace801f033206ad86400a6fd09
https://doi.org/10.1109/iedm.1996.553144
https://doi.org/10.1109/iedm.1996.553144
Publikováno v:
1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).
This paper reports the drift of Cu ions in various low-permittivity polymer dielectrics to identify Cu barrier requirements for future ULSI integration. Bias-temperature stressing was conducted on Cu-insulator-semiconductor capacitors to investigate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb1d6577cd4c13101794d0394e2dcb25
https://doi.org/10.1109/vlsit.1998.689185
https://doi.org/10.1109/vlsit.1998.689185
Autor:
Changsup Ryu, Kee-Won Kwon, Rahim Kavari, Alvin Leng Sun Loke, G.W. Ray, S. Simon Wong, Valery M. Dubin
Publikováno v:
1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).
Summary form only given. This paper compares the microstructure and reliability of submicron Damascene CVD and electroplated Cu interconnects. For CVD Cu, the electromigration lifetime degrades in the deep submicron range due to fine grains constrain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d50826840d15b9b80308f784aae69d1e
https://doi.org/10.1109/vlsit.1998.689238
https://doi.org/10.1109/vlsit.1998.689238
Publikováno v:
1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::622a3cd4ac74c86949cdd5673c1364e8
https://doi.org/10.1109/relphy.1997.584260
https://doi.org/10.1109/relphy.1997.584260
Autor:
Thomas H. Lee, C. Patrick Yue, Hyongsok Tom Soh, Calvin F. Quate, Anthony M. McCarthy, Changsup Ryu
Publikováno v:
Extended Abstracts of the 1998 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9586ec38a8491ca726cf2993942a204d
https://doi.org/10.7567/ssdm.1998.a-7-8
https://doi.org/10.7567/ssdm.1998.a-7-8