Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Changsub Lee"'
Publikováno v:
ECS Meeting Abstracts. :3907-3907
We investigated hot hole-induced degradation in HV pMOSFETs. When the electric field between gate and channel is negatively higher than 6 MV/cm, an additional shift of sub-threshold swing leads to the shift of threshold voltage due to Fowler-Nordheim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f61531848b0abf2b310d75e6cc3ba0af
https://doi.org/10.1149/ma2016-02/53/3907
https://doi.org/10.1149/ma2016-02/53/3907
Publikováno v:
ECS Meeting Abstracts. :1872-1872
We investigated the degradation characteristics of High-voltage (HV) P-type Metal-oxide-semiconductor field effect transistors (P-MOSFETs) during negatively AC stress. The threshold voltage is shifted by degradation during the highly-negative gate bi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a2e728d8a54f241051c75660fa2b886
https://doi.org/10.1149/ma2015-02/47/1872
https://doi.org/10.1149/ma2015-02/47/1872
Autor:
null Tae-Kyung Kim, null Jaihyuk Song, null Changsub Lee, null Dongyean Oh, null Taeseok Jang, null Jongkwang Lim, null Dongjun Lee, null Seung Lee, null Minhwan Lim, null Hyunyoung Shim, null Bongtae Park, null Man-Ki Lee, null Hunkook Lee, null Sangyeon Jo, null Woonkyung Lee, null Jeonghyuk Choi, null Kinam Kim
Publikováno v:
2006 21st IEEE Non-Volatile Semiconductor Memory Workshop.
One of the most important performances of NAND flash memory is reliability characteristics, such as program/erase cycling and data retention. Tunnel oxide quality is essential to the reliability and it is well known that tunnel oxide degradation duri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09a1ed2fc95f870f720f6dabef08aa27
https://doi.org/10.1109/.2006.1629484
https://doi.org/10.1109/.2006.1629484
Publikováno v:
2008 Joint Non-Volatile Semiconductor Memory Workshop & International Conference on Memory Technology & Design; 2008, p5-7, 3p
Publikováno v:
2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop; 2007, p39-41, 3p
Autor:
Tae-Kyung Kim, Jaihyuk Song, Changsub Lee, Dongyean Oh, Taeseok Jang, Jongkwang Lim, Dongjun Lee, Seungjun Lee, Minhwan Lim, Hyunyoung Shim, Bongtae Park, Man-Ki Lee, Hunkook Lee
Publikováno v:
2006 21st IEEE Non-Volatile Semiconductor Memory Workshop; 2006, p38-39, 2p
Publikováno v:
Japanese Journal of Applied Physics; Nov2016, Vol. 55 Issue 11, p1-1, 1p
Publikováno v:
2014 IEEE International Electron Devices Meeting; 2014, p00.4-14.5.4, 0p