Zobrazeno 1 - 10
of 115
pro vyhledávání: '"Changling Yan"'
Autor:
Yifei Li, Tiwei Chen, Yongjian Ma, Yu Hu, Li Zhang, Xiaodong Zhang, Jinghang Yang, Lu Wang, Huanyu Zhang, Changling Yan, Zhongming Zeng, Baoshun Zhang
Publikováno v:
Crystals, Vol 14, Iss 6, p 494 (2024)
Oxygen vacancies (Vo) can significantly degrade the electrical properties of indium oxide (In2O3) thin films, thus limiting their application in the field of ultraviolet detection. In this work, the Vo is effectively suppressed by adjusting the Trime
Externí odkaz:
https://doaj.org/article/cce5e85887024809af95df990bbd5c07
Autor:
Xuemin Zhang, Changling Yan, Xin Hu, Qingsong Dong, Zhiyi Liu, Weiming Lv, Chunhong Zeng, Ruigong Su, Yiqun Wang, Tianyu Sun, Zheng Xing, Chao Pang, Baoshun Zhang, Wenhua Shi, Minsheng Long
Publikováno v:
Materials Research Express, Vol 8, Iss 3, p 035602 (2021)
Black phosphorus (BP) as a promising candidate for mid-wave infrared (MWIR) detection has attracted much attention. However, the high-speed photoresponse at the MWIR is yet to be a challenge. In this paper, we report a BP-graphene heterostructure pho
Externí odkaz:
https://doaj.org/article/d8339a4bffc140fa8096a267dd09f955
Autor:
Xuemin Zhang, Changling Yan, Chunhong Zeng, Tianyu Sun, Zheng Xing, Wenhua Shi, Yiqun Wang, Chao Pang, Baoshun Zhang
Publikováno v:
Materials Research Express, Vol 7, Iss 11, p 116410 (2020)
Epitaxial graphene (EG) on semi-insulating SiC prepared by a thermal decomposition method is the most promising strategy for graphene application in large-scale integrated circuits due to compatibility with current semiconductor processes. In this st
Externí odkaz:
https://doaj.org/article/89ea8342fb4d44d1ba6f2811a955f343
Publikováno v:
Journal of Russian Laser Research. 43:354-360
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4c9ad64b795db79a9cdf9c3e6e27c45
https://doi.org/10.1007/s10946-022-10059-w
https://doi.org/10.1007/s10946-022-10059-w
Autor:
Yuhua Zhao, Yujuan Chen, Kelei Zhuo, Quanzhou Du, Dong Sun, Zhiyong Li, Huiyong Wang, Changling Yan, Jianji Wang
Publikováno v:
Chemical Communications. 58:11567-11570
An azobenzene-modified redox-active ionic liquid (IL) is demonstrated. It is incorporated into another IL to form a mixed electrolyte, which markedly improves the capacitance performance of supercapacitors via extra pseudocapacitance contribution.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e721f808a5df13b06453475176124f9
https://doi.org/10.1039/d2cc04081f
https://doi.org/10.1039/d2cc04081f
Autor:
B.-S. Zhang, J.-H. Yang, Xuemin Zhang, Changling Yan, T.-Y. Sun, Y.-Q. Wang, Z. Xing, G.-H. Yu, Chunhong Zeng
Publikováno v:
Semiconductors. 55:387-393
High-quality gallium nitride etching is highly desirable in electronic device fabrications. For the GaN base devices, the electronic properties largely depended on the etching induced surface damages. To overcome this, a controllable GaN etching meth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::590e68b2b07fe0ec2d0b929837525da7
https://doi.org/10.1134/s1063782621030180
https://doi.org/10.1134/s1063782621030180
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71ad9b92607b3a2998d5add97f326c3c
https://doi.org/10.2139/ssrn.4100338
https://doi.org/10.2139/ssrn.4100338
Publikováno v:
Applied Surface Science. 610:155456
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45d000840cb5dcae302af4ff3b7f25c4
https://doi.org/10.1016/j.apsusc.2022.155456
https://doi.org/10.1016/j.apsusc.2022.155456
Publikováno v:
Journal of Luminescence. 210:21-27
Silver is one of the most important heavy metals with a broad range of applications; however, it can have significant negative impacts on both the ambient environment and organisms. For this work, an interesting fluorescence polarization sensor based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c8d5665ee26e94e2c6871e54a02cc0a
https://doi.org/10.1016/j.jlumin.2018.12.015
https://doi.org/10.1016/j.jlumin.2018.12.015
Autor:
Xuemin Zhang, Changling Yan, Jinghang Yang, Chao Pang, Yunzhen Yue, Chunhong Zeng, Baoshun Zhang
Publikováno v:
Journal of Semiconductors. 43:062804
GaN has been widely used in the fabrication of ultraviolet photodetectors because of its outstanding properties. In this paper, we report a graphene–GaN nanorod heterostructure photodetector with fast photoresponse in the UV range. GaN nanorods wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8506cc713ba6c85c0a5389f7617dc26e
https://doi.org/10.1088/1674-4926/43/6/062804
https://doi.org/10.1088/1674-4926/43/6/062804