Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Changlim Woo"'
Publikováno v:
Crystals, Vol 14, Iss 11, p 984 (2024)
Recently, two-dimensional materials have gained significant attention due to their outstanding properties such as high charge mobility, mechanical strength, and electrical characteristics. These materials are considered one of the most promising solu
Externí odkaz:
https://doaj.org/article/be9f1620d7544064959f8cf61b73c882
Publikováno v:
Crystals, Vol 12, Iss 9, p 1301 (2022)
In this study, we fabricated metal–insulator–semiconductor field-effect transistors (MISFETs) based on nanolayered molybdenum diselenide (MoSe2) using two insulator materials, silicon dioxide (SiO2) and silicon nitride (SiN). We performed morphol
Externí odkaz:
https://doaj.org/article/ff2029cff93d4ca3a7afc273013e351a
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:11841-11850
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b87308477b0c55071132c1c1e73d626
https://doi.org/10.1007/s10854-022-08147-3
https://doi.org/10.1007/s10854-022-08147-3
Publikováno v:
Electronics; Volume 11; Issue 5; Pages: 833
Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have attracted attention as promising next-generation electronic devices and sensors. In this study, we fabricated a novel nanoelectronic device based on a black-phosphorus-gated WSe2/SnSe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bdec39081b7803337162f50bcdf8622
Two-dimensional (2D) materials are promising for future electronic and optoelectronic devices. In particular, 2D material-based photodetectors have been widely studied because of their excellent photodetection performance. Owing to its excellent elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::262cbe68dbb66ad04d06c7e03aede044
https://doi.org/10.21203/rs.3.rs-308651/v1
https://doi.org/10.21203/rs.3.rs-308651/v1
Publikováno v:
physica status solidi (a). 219:2100818
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd7f674e94ef6b058ce087ca64872e38
https://doi.org/10.1002/pssa.202100818
https://doi.org/10.1002/pssa.202100818
Publikováno v:
Coatings; Volume 12; Issue 4; Pages: 445
Herein, we report the fabrication of a novel heterojunction field-effect transistor (HJFET) based on two-dimensional graphene (Gr), molybdenum diselenide (MoSe2), and black phosphorus (BP) that is shielded using hexagonal boron nitride to prevent dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::79ae072081f19c8bbd284cecc203288f
https://doi.org/10.3390/coatings12040445
https://doi.org/10.3390/coatings12040445