Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Changhwa Jung"'
Autor:
Ayushi Tripathi, Yoonjoo Lee, Changhwa Jung, Soohyun Kim, Soonyong Lee, Woojin Choi, Chaeyeon Park, Young Wan Kwon, Hyunjung Lee, Han Young Woo
Publikováno v:
Journal of Materials Chemistry C. 11:5646-5656
Combining a planar electron-rich D–D′-type molecular design and optimal hybrid doping successfully demonstrates metal-like carrier transport whilst reducing the Seebeck coefficient–conductivity trade-off relation under degenerately doped condit
Autor:
Woojin Choi, Soohyun Kim, Soonyong Lee, Changhwa Jung, Ayushi Tripathi, Yoonjoo Lee, Han Young Woo, Hyunjung Lee
Publikováno v:
Small methods.
Thermoelectric (TE) performance of a specific semicrystalline polymer is studied experimentally only in a limited range of doping levels with molecular doping methods. The doping level is finely controlled via in situ electrochemical doping in a wide
Autor:
Woojin Choi, Soohyun Kim, Soonyong Lee, Changhwa Jung, Ayushi Tripathi, Yoonjoo Lee, Han Young Woo, Hyunjung Lee
Publikováno v:
Small Methods. 7:2370005
Publikováno v:
International Journal of Environmental Research and Public Health; Volume 19; Issue 17; Pages: 10847
This study focuses on the impacts of implementing an online curriculum at a graduate school in South Korea in response to the COVID-19 pandemic. A framework distinguishing impacts to academic, educational, and institutional stakeholders from the virt
Autor:
Pešić, Milan, Knebel, Steve, Geyer, Maximilian, Schmelzer, Sebastian, Böttger, Ulrich, Kolomiiets, Nadiia, Afanas'ev, Valeri V., Kyuho Cho, Changhwa Jung, Jaewan Chang, Hanjin Lim, Mikolajick, Thomas, Schroeder, Uwe
Publikováno v:
Journal of Applied Physics; 2/14/2016, Vol. 119 Issue 6, p1-5, 5p, 1 Diagram, 1 Chart, 5 Graphs
Autor:
Han-jin Lim, Milan Pešić, Uwe Schroeder, Nadiia Kolomiiets, Changhwa Jung, Steve Knebel, Valeri Afanas'ev, Kyu-Ho Cho, Jaewan Chang, Thomas Mikolajick
Publikováno v:
Solid-State Electronics. 115:133-139
DRAM capacitors are reaching the scaling limit and new approaches are necessary to enable further reduction of the physical thickness of the capacitor dielectric. The conduction band offset (CBO) of a platinum noble metal electrode on atomic layer de
Publikováno v:
Biofactors. 2006, Vol. 26 Issue 1, p1-5. 5p. 1 Chart, 2 Graphs.
Autor:
Milan Pešić, Steve Knebel, Thomas Mikolajick, Uwe Schroeder, Nadiia Kolomiiets, Valeri Afanas'ev, Kyu-Ho Cho, Han-jin Lim, Jaewan Chang, Changhwa Jung
Publikováno v:
EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.
DRAM capacitors are reaching the scaling limit and new approaches are necessary to enable further reduction of the physical thickness of the capacitor dielectric. The Schottky Barrier Height (SBH) of a noble metal electrode (Pt) on atomic layer depos
Autor:
Han-jin Lim, Sebastian Schmelzer, Valeri Afanas'ev, Kyu-Ho Cho, Ulrich Böttger, Steve Knebel, Changhwa Jung, Milan Pešić, Jaewan Chang, Uwe Schroeder, Maximilian Geyer, Nadiia Kolomiiets, Thomas Mikolajick
Publikováno v:
Journal of Applied Physics. 119:064101
During dynamic random access memory (DRAM) capacitor scaling, a lot of effort was put searching for new material stacks to overcome the scaling limitations of the current material stack, such as leakage and sufficient capacitance. In this study, very
Publikováno v:
Bioscience, Biotechnology & Biochemistry; Sep2005, Vol. 69 Issue 9, p1693-1699, 8p, 1 Chart, 7 Graphs