Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Changho Ra"'
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-9 (2024)
Abstract In this study, we applied ferroelectrics to the gate stack of Field Effect Transistors (FETs) with a 2D transition-metal dichalcogenide (TMDC) channel, actively researching for sub-2nm technology node implementation. Subsequently, we analyze
Externí odkaz:
https://doaj.org/article/3bd9b6d8c89040748e257953404f9bee
Autor:
Sueyeon Kim, Insoo Choi, Sangki Cho, Myounggon Kang, Seungjae Baik, Changho Ra, Jongwook Jeon
Publikováno v:
IEEE Access, Vol 11, Pp 97778-97785 (2023)
The high data throughput and high energy efficiency required recently are increasingly difficult to implement due to the von Neumann bottleneck. As a way to overcome this, Logic-in-Memory (LiM) technology has recently been receiving a lot of attentio
Externí odkaz:
https://doaj.org/article/3e4bccd0e0ce4ec099323c37c01f14ea
Publikováno v:
Nanomaterials, Vol 12, Iss 13, p 2299 (2022)
In this work, WS2 was adopted as a channel material among transition metal dichalcogenides (TMD) materials that have recently been in the spotlight, and the circuit power performance (power consumption, operating frequency) of the monolayer WS2 field
Externí odkaz:
https://doaj.org/article/1b9a4dc8eecf4704b912a372caf01d57