Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Changhee Shin"'
Autor:
Youngjoon Kim, Hyeongsu Choi, Seokhwi Song, Hyunwoo Park, Hyungtak Seo, Hyunwoo Yuk, Keunsik Kim, Hyeongtag Jeon, Changhee Shin, Namgue Lee, Youngtae Choi, Jongwoo Kim, Chanwon Jung
Publikováno v:
Journal of Ceramic Processing Research. 20:484-489
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aae3e966f29c9a6b12df0e03012f7df9
https://doi.org/10.36410/jcpr.2019.20.5.484
https://doi.org/10.36410/jcpr.2019.20.5.484
Autor:
Woochool Jang, Heeyoung Jeon, Changhee Shin, Jingyu Park, Jaemin Lee, Kunyoung Lee, Hyeongtag Jeon, Hyunjung Kim
Publikováno v:
Current Applied Physics. 17:230-234
The role of a Ti nano-layer embedded in TaO x -based devices operating with conductive filaments consisting of oxygen vacancies was investigated. The Ti nano-layer was embedded in three different positions: the top interface (Au/TaO x ), bottom inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7eca2e013e2f9300cc3e8a0123d07a6
https://doi.org/10.1016/j.cap.2016.08.020
https://doi.org/10.1016/j.cap.2016.08.020
Autor:
Woochool Jang, Jaewan Chang, Heeyoung Jeon, Hyungtak Seo, Hyoseok Song, Changhee Shin, Seokyoon Shin, Joo Hyun Park, Younsoo Kim, Jae Hyoung Choi, Han-jin Lim, Hyeongtag Jeon
Publikováno v:
Thin Solid Films. 619:317-322
In this study, we report the effect of process conditions on the crystallinity and energy band structure of atomic layer deposition (ALD) ZrO2 films deposited, using tris(dimethylamino) cyclopentadienyl zirconium as a precursor and ozone as a reactan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a890e970c9b9152c1d1018638f0f53a
https://doi.org/10.1016/j.tsf.2016.10.044
https://doi.org/10.1016/j.tsf.2016.10.044
Autor:
Dae-Gyu Shin, ChangHee Shin, Seiichi Aritome, Beom-Yong Kim, Sung-Joo Hong, Kwon Hong, MinSoo Kim, SangMoo Choi, Sung-Jin Whang, Ji-Hye Han, JinHo Bin, Young-Kyun Jung, Sungki Park, Ki-hong Lee, Kim Sungjun, BoMi Lee, Sung-Yoon Cho, Hyun-Seung Yoo
Publikováno v:
Solid-State Electronics. 79:166-171
A novel three-dimensional (3D) Dual Control gate with Surrounding Floating gate (DC-SF) NAND flash cell has been successfully developed. The DC-SF cell consists of a surrounding floating gate with stacked dual control gates. With this structure, high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a361cc6a29d653f09ec85f28c71fab86
https://doi.org/10.1016/j.sse.2012.07.005
https://doi.org/10.1016/j.sse.2012.07.005
Autor:
Manseok Kim, Changhee Shin, Junhan Yuh, Hyun Jung Kim, Kunyoung Lee, Hyeongtag Jeon, Heewoo Lim, Woochool Jang
Publikováno v:
physica status solidi (a). 214:1700010
Tungsten-nitrogen-carbide (WNxCy) thin films were investigated as the metal gate of complementary metal-oxide-semiconductor (CMOS) devices. WNxCy thin films were deposited by employing the remote plasma atomic layer deposition (RPALD) using a bis(ter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::366b9ecb09338db8544ca8d4b3470cd5
https://doi.org/10.1002/pssa.201700010
https://doi.org/10.1002/pssa.201700010
Autor:
Woochool Jang, Hwanwoo Kim, Kangsoo Kim, Hyeongtag Jeon, Changhee Shin, Hyunjung Kim, Hyoseok Song, Seokyoon Shin
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 35:01A101
This work proposes a new method toward improving dielectric barrier characteristics through low dielectric permittivity (k) amorphous silicon nitride films (SiNx) deposited by plasma enhanced atomic layer deposition (PEALD). The dielectric constants
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffbafa7c1cfe1e8009b9100aa521ef2e
https://doi.org/10.1116/1.4964889
https://doi.org/10.1116/1.4964889
Autor:
In-Hye Lee, Changhee Shin, Heeyoung Jeon, Hyunjung Kim, Seokyoon Shin, Kunyoung Lee, Hyeongtag Jeon, Jingyu Park
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 34:031502
In this study, the effects of a thin Ru interlayer on the thermal and morphological stability of NiSi have been investigated. Ru and Ni thin films were deposited sequentially to form a Ni/Ru/Si bilayered structure, without breaking the vacuum, by rem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bbb98736856b22e7c27699d4074a1aa
https://doi.org/10.1116/1.4943090
https://doi.org/10.1116/1.4943090
Autor:
Hwanwoo Kim, Hyoseok Song, Changhee Shin, Kangsoo Kim, Woochool Jang, Hyunjung Kim, Seokyoon Shin, Hyeongtag Jeon
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Jan2017, Vol. 35 Issue 1, p1-7, 7p
Autor:
Inhye Lee, Jingyu Park, Heeyoung Jeon, Hyunjung Kim, Changhee Shin, Seokyoon Shin, Kunyoung Lee, Hyeongtag Jeon
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; May/Jun2016, Vol. 34 Issue 3, p031502-1-031502-6, 6p