Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Changhee Ko"'
Autor:
Raphael Rochat, James Hack, Christian Dussarrat, Robert L. Opila, Meixi Chen, Naoto Noda, Changhee Ko, Abhishek Iyer
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
SiOC thin films have been successfully deposited using carbosilane compounds with ultra-low-temperature ALD (ULT-ALD) around 50°C to 70°C. This plasma-free ULT-ALD eliminates the damage to the silicon surfaces due to plasma and high temperature. Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ed1e5b93c753d78a502b677120e3504
https://doi.org/10.1109/pvsc.2017.8366266
https://doi.org/10.1109/pvsc.2017.8366266
Publikováno v:
2017 IEEE International Interconnect Technology Conference (IITC).
A new family of highly volatile alkylsilyl-functionality Co precursors, R 3 SiCo(CO) 4 , has been synthesized. One of them, Et 3 SiCo(CO) 4 , has been evaluated by low temperature thermal chemical vapor deposition (CVD) and atomic layer deposition (A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::430daa5748a6ee41f79bd5164a85617a
https://doi.org/10.1109/iitc-amc.2017.7968940
https://doi.org/10.1109/iitc-amc.2017.7968940
Autor:
Seong Keun Kim, Jeong Hwan Han, Cheol Seong Hwang, Woojin Jeon, Woongkyu Lee, Yeon Woo Yoo, Changhee Ko, Clement Lansalot-Matras, Sang Woon Lee
Publikováno v:
Chemistry of Materials. 25:953-961
The characteristics of the atomic layer deposition (ALD) of SrTiO3 (STO) films were examined for metal–insulator–metal capacitors, with Cp-based precursors Sr(iPr3Cp)2 and Cp*Ti(OMe)3 [Cp* = C5(CH3)5] employed as the Sr and Ti precursors, respect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa6b3d39cad10a262dc229701844167a
https://doi.org/10.1021/cm304125e
https://doi.org/10.1021/cm304125e
Autor:
Changhee Ko, Cheol Seong Hwang, Sang Woon Lee, Woojin Jeon, Julien Gatineau, Woongkyu Lee, Jeong Hwan Han
Publikováno v:
Chemistry of Materials. 24:4686-4692
SrRuO3 (SRO) film was deposited by sequential executions of atomic layer deposition of SrO and chemical vapor deposition of RuO2 layers at a low growth temperature of 230 °C using Sr(iPr3Cp)2, RuO4 precursors, and O2 gas. A wide range of Sr (Ru) con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ba81c9728b66739b1028ec40b51c4f1
https://doi.org/10.1021/cm302470k
https://doi.org/10.1021/cm302470k
Autor:
Sang Woon Lee, Changhee Ko, Jung Ho Yoon, Jun Yeong Seok, Julien Gatineau, Gun Hwan Kim, Seul Ji Song, Kyung Jean Yoon, Cheol Seong Hwang
Publikováno v:
Chemistry of Materials. 24:4675-4685
In this study, NiO thin films were deposited via a plasma-enhanced atomic layer deposition (PEALD) on metal (Pt, Ru, and W) substrates using a bis-methylcyclopentadienyl-nickel ([MeCp]2Ni) precursor followed by a reaction with plasma-enhanced oxygen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ed555f9e3cd4a3fc15878c1d75b2725
https://doi.org/10.1021/cm302182s
https://doi.org/10.1021/cm302182s
Autor:
Changhee Ko, Subramanian Vaidyanathan, Hermona K. Christian-Pandya, Mary E. Galvin, Frederick L. Beyer
Publikováno v:
Synthetic Metals. 157:120-124
Flexible light-emitting diodes, with simple device architectures, fabricated using a random copolymer of hole transporting dialkoxy-substituted phenylenevinylene (PV) with an electron transporting oxadiazole containing PV derivative as the emissive l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::019279e326fca56f5c9dc5f54d0003d4
https://doi.org/10.1016/j.synthmet.2006.12.014
https://doi.org/10.1016/j.synthmet.2006.12.014
Publikováno v:
IEEE International Interconnect Technology Conference.
A new family of oxygen and fluorine free Nickel (Ni) precursors, which are based on allyl and alkylpyrrolylimine ligands [Ni(allyl)(PCAI-R)], has been developed and evaluated for a Ni metal film with thermal and plasma enhanced ALD using H 2 /NH 3 as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f5679f42d5d9f6944bb44986d663be2
https://doi.org/10.1109/iitc.2014.6831859
https://doi.org/10.1109/iitc.2014.6831859
Publikováno v:
Macromolecular Chemistry and Physics. 200:2188-2204
Thermodynamic principles and some applications of the temperature gradient interaction chromatography (TGIC) recently developed for the characterization of synthetic polymers are described. TGIC is a form of high performance liquid chromatography (HP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc27ca31255d708255d4436f0625ec51
https://doi.org/10.1002/(sici)1521-3935(19991001)200:10<2188::aid-macp2188>3.0.co
https://doi.org/10.1002/(sici)1521-3935(19991001)200:10<2188::aid-macp2188>3.0.co
Publikováno v:
2013 IEEE International Interconnect Technology Conference - IITC.
Plasma enhanced atomic layer deposition (PEALD) using the novel η3-2-methylallyl N,N'-diisopropylacetamidinate nickel(II) precursor has been investigated. NH3 has been selected as the most appropriate co-reactant for the depositions. (PE)ALD saturat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d18f81f1404f661dd616615deac58cb
https://doi.org/10.1109/iitc.2013.6615573
https://doi.org/10.1109/iitc.2013.6615573
Autor:
Cheol Seong Hwang, Woongkyu Lee, Jeong Hwan Han, Woojin Jeon, Yeon Woo Yoo, Changhee Ko, Julien Gatineau, B. Gouat, U. Weber, Peter K. Baumann, Michael Heuken, B. Lu, S. Hoffmann-Eifert, M. Reiners, N. Aslam, I. Kärkkänen, J. H. Kim, R. Waser, Taeyong Eom, Taehong Gwon, Si Jung Yoo, Moo-Sung Kim, Manchao Xiao, Iain Buchanan
Publikováno v:
Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17 to 20 2012, Aachen, Germany
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1989813acc854110d791bb8452cf674a
https://doi.org/10.1002/9783527667703.ch61
https://doi.org/10.1002/9783527667703.ch61
