Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Changhae Park"'
Publikováno v:
IEEE Electron Device Letters. 19:237-240
Boron penetration from p/sup +/ doped poly-Si gates in PMOSFET is greatly reduced by post poly-Si gate rapid thermal nitridation. Gate oxide reliability against boron penetration is significantly enhanced. When post poly-Si nitridation is combined wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d4eb3b8dc8810484ed827096690022e
https://doi.org/10.1109/55.701428
https://doi.org/10.1109/55.701428
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1690-1695
The effects of ion scattering by a silicon dioxide layer on boron distribution profiles implanted through the oxide layer into single‐crystal silicon have been studied. The intensity of ion scattering and the degree of randomization of the directio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87e9081344b87327fbef0758351e0cd5
https://doi.org/10.1116/1.577771
https://doi.org/10.1116/1.577771
Publikováno v:
Journal of The Electrochemical Society. 138:2102-2107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5b7144f4f07083294525f509aed18d3
https://doi.org/10.1149/1.2085933
https://doi.org/10.1149/1.2085933
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :60-64
Ion-implantation-induced damage in crystalline material can cause the shape of implanted impurity distributions to vary strongly with dose. We have developed a model which directly simulates the accumulation of this damage and the effect it has on th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95a62e72ef9ab447c90682c8d4f88901
https://doi.org/10.1016/0168-583x(91)95175-d
https://doi.org/10.1016/0168-583x(91)95175-d
Publikováno v:
Journal of The Electrochemical Society. 138:2107-2115
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b47a7c3128584dc069db09ad985d00d
https://doi.org/10.1149/1.2085934
https://doi.org/10.1149/1.2085934
Autor:
Al F. Tasch, Kevin M. Klein, Steve Novak, Changhae Park, Dennis Kamenitsa, Robert B. Simonton
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :159-163
The implanted impurity profile variation across a wafer due to an electrostatic scanning system has been studied for boron implants into (100) silicon wafers. The variation of the actual tilt and rotation angles across a wafer has been precisely dete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a122dd45e39b24cb614b6dc0c8f0d73
https://doi.org/10.1016/0168-583x(91)95198-m
https://doi.org/10.1016/0168-583x(91)95198-m
Autor:
Al F. Tasch, Changhae Park, Dennis Kamenitsa, Kevin M. Klein, Andrew Marlow Ray, Robert B. Simonton
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:39-44
This investigation will present measurements of silicon 〈100〉 wafers, implanted with tilt angles in the range 7–60°, which identify combinations of tilt and azimuthal (twist) angles that avoid major channeling zones. The orientations identifie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3465b531af2b1cbd5f0d2c294e240db1
https://doi.org/10.1016/0168-583x(91)96132-5
https://doi.org/10.1016/0168-583x(91)96132-5
Publikováno v:
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering. 10:331-340
A comprehensive and computationally efficient modeling strategy for the rapid and accurate simulation of implanted impurity distribution profiles in single‐crystal silicon has been developed. This modeling strategy exploits the advantages of both M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc8570b1ea3805f01b8f38e407f6f7cb
https://doi.org/10.1108/eb051710
https://doi.org/10.1108/eb051710
Publikováno v:
Solid-State Electronics. 33:645-650
A semi-empirical approach for modeling of ion-implanted impurity distributions has an inherent advantage of high computational efficiency which is a vital issue for the simulation of a large number of processing steps required in the fabrication of h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60551667a24773f4eee52c503aaceeb7
https://doi.org/10.1016/0038-1101(90)90176-f
https://doi.org/10.1016/0038-1101(90)90176-f
Publikováno v:
1996 Symposium on VLSI Technology. Digest of Technical Papers.
We report for the first time, a bulk silicon, low voltage graded-channel MOSFET (LV-GCMOS) capable of operating below 1 volt, while delivering the required circuit performance. Channel engineering enabled a lowering of the subthreshold slope by more
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06f6f8f01d32172c8e1527577611356c
https://doi.org/10.1109/vlsit.1996.507843
https://doi.org/10.1109/vlsit.1996.507843