Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Changgan Z"'
Autor:
Chaojie Luo, Guohua Cao, Beilin Wang, Lili Jiang, Hengyi Zhao, Tongrui Li, Xiaolin Tai, Zhiyong Lin, Yue Lin, Zhe Sun, Ping Cui, Hui Zhang, Zhenyu Zhang, Changgan Zeng
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-7 (2024)
Abstract Heterostructures and superlattices composed of layered transition metal dichalcogenides (TMDs), celebrated for their superior emergent properties over individual components, offer significant promise for the development of multifunctional el
Externí odkaz:
https://doaj.org/article/31072c7779f044bf8ea39895cd17eba9
Autor:
Guanghui Cheng, Meng-Hsien Lin, Hung-Ying Chen, Dongli Wang, Zheyan Wang, Wei Qin, Zhenyu Zhang, Changgan Zeng
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-7 (2024)
Abstract In recent years, lightwave has stood out as an ultrafast, non-contact control knob for developing compact superconducting circuitry. However, the modulation efficiency is limited by the low photoresponse of superconductors. Plasmons, with th
Externí odkaz:
https://doaj.org/article/628fa6ad8c924584b5611f3941567f8b
Autor:
Bin Cheng, Yang Gao, Zhi Zheng, Shuhang Chen, Zheng Liu, Ling Zhang, Qi Zhu, Hui Li, Lin Li, Changgan Zeng
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-7 (2024)
Abstract The second-order nonlinear Hall effect (NLHE) in non-centrosymmetric materials has recently drawn intense interest, since its inherent rectification could enable various device applications such as energy harvesting and wireless charging. Ho
Externí odkaz:
https://doaj.org/article/a89209bfdd9a47c1bc0bb78701524042
Publikováno v:
Ecological Indicators, Vol 166, Iss , Pp 112263- (2024)
The unprecedented pace of urbanization has intensified environmental concerns, underscoring the critical importance of bolstering urban ecosystem resilience (UER) in contemporary cities. This study presents a Pressure–State–Response framework for
Externí odkaz:
https://doaj.org/article/b67dfe6625054f6b8022ea7c64dd8d69
Autor:
Xianyang Lu, Zhiyong Lin, Hanqi Pi, Tan Zhang, Guanqi Li, Yuting Gong, Yu Yan, Xuezhong Ruan, Yao Li, Hui Zhang, Lin Li, Liang He, Jing Wu, Rong Zhang, Hongming Weng, Changgan Zeng, Yongbing Xu
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract The magnetic type-II Weyl semimetal (MWSM) Co3Sn2S2 has recently been found to host a variety of remarkable phenomena including surface Fermi-arcs, giant anomalous Hall effect, and negative flat band magnetism. However, the dynamic magnetic
Externí odkaz:
https://doaj.org/article/ea1ee45129a4460c9e0db3d11a6ba788
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-7 (2023)
Previous demonstrations of quantum interference in solids have mainly been limited to intra-layer transport within single conductors. Zhu et al. report a new type of inter-layer quantum interference in graphene-based double-layer devices, due to inte
Externí odkaz:
https://doaj.org/article/90db1164581740a9a8bc817cf80a3134
Autor:
Junchao Ma, Bin Cheng, Lin Li, Zipu Fan, Haimen Mu, Jiawei Lai, Xiaoming Song, Dehong Yang, Jinluo Cheng, Zhengfei Wang, Changgan Zeng, Dong Sun
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-7 (2022)
Materials with Weyl cones and band gaps coexisting are desired due to their combination of Weyl cones and the tunable and controllable nature of semiconductor. Here, the authors find Weyl-related band structures and semiconducting gap of tellurium.
Externí odkaz:
https://doaj.org/article/3afeec97614740feb8c74ca199c8968c
Autor:
Han Xu, Zuhuang Chen, Xiaoyi Zhang, Yongqi Dong, Bin Hong, Jiangtao Zhao, Lang Chen, Sujit Das, Chen Gao, Changgan Zeng, Haidan Wen, Zhenlin Luo
Publikováno v:
AIP Advances, Vol 9, Iss 2, Pp 025114-025114-7 (2019)
Understanding and controlling the domain evolution under external stimuli in multiferroic thin films is critical to realizing nanoelectronic devices, including for non-volatile memory, data storage, sensors, and optoelectronics. In this article, we s
Externí odkaz:
https://doaj.org/article/85e21b63dbf84ee0be63a2e9bb0a9417
Autor:
Qiang Zhang, Yuxuan Chen, Chendong Zhang, Chi-Ruei Pan, Mei-Yin Chou, Changgan Zeng, Chih-Kang Shih
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
Direct epitaxial growth of vertically stacked layered materials is a promising route towards scalable fabrication of van der Waals heterostructures. Here, the authors demonstrate molecular beam epitaxy of semiconducting MoSe2on a hBN/Ru(0001) substra
Externí odkaz:
https://doaj.org/article/cf549fbfc8424b5a92cf9b563b0ead4e
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