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pro vyhledávání: '"Changfan Ju"'
Autor:
Changfan Ju, Binjian Zeng, Ziqi Luo, Zhibin Yang, Puqi Hao, Luocheng Liao, Qijun Yang, Qiangxiang Peng, Shuaizhi Zheng, Yichun Zhou, Min Liao
Publikováno v:
Journal of Materiomics, Vol 10, Iss 2, Pp 277-284 (2024)
Hf0.5Zr0.5O2 (HZO) ferroelectric thin films have gained significant attention for the development of next-generation ferroelectric memories by complementary-metal-oxide semiconductor (CMOS) back-end-of-line (BEOL) processing, due to their relatively
Externí odkaz:
https://doaj.org/article/e1c66f6c46f24303af4852d15c97d7eb