Zobrazeno 1 - 10
of 172
pro vyhledávání: '"Changchun Chai"'
Publikováno v:
Arabian Journal of Chemistry, Vol 15, Iss 12, Pp 104377- (2022)
It is a significant issue in the field of semiconductor devices and optoelectronic devices to find silicon allotropes with high mobility, direct band gap and high light absorption to replace traditional diamond silicon (d-Si). By constructing a zeoli
Externí odkaz:
https://doaj.org/article/4878ad73745942929075365224bb1e8c
Publikováno v:
Micromachines, Vol 14, Iss 3, p 600 (2023)
The anti-ESD characteristic of the electronic system is paid more and more attention. Moreover, the on-chip electrostatic discharge (ESD) is necessary for integrated circuits to prevent ESD failures. In this paper, the mixed TCAD model of the ESD pro
Externí odkaz:
https://doaj.org/article/6f11b4bcb2da4346b8caa0718c2ada82
Publikováno v:
Results in Physics, Vol 26, Iss , Pp 104349- (2021)
Three direct and two indirect semiconductor materials together with one metallic material for group-IV binary compounds in the P4/ncc phase are investigated in this work, by employing density functional theory (DFT), where the morphology, stability,
Externí odkaz:
https://doaj.org/article/22f771404e23494c89b58ea74788b30e
Publikováno v:
Micromachines, Vol 13, Iss 8, p 1288 (2022)
Currently, severe electromagnetic circumstances pose a serious threat to electronic systems. In this paper, the damage effects of a high-power electromagnetic pulse (EMP) on the GaN high-electron-mobility transistor (HEMT) were investigated in detail
Externí odkaz:
https://doaj.org/article/38b377915734419e8f4666ff8d5bd5bd
Publikováno v:
AIP Advances, Vol 11, Iss 4, Pp 045107-045107-10 (2021)
The crystal structures, mechanical stability, anisotropy, electronic band structures, and effective mass of Pbca-SiC and Pbcn-SiC under pressure are calculated utilizing first-principles calculations. Pbca-SiC and Pbcn-SiC with pressures in the range
Externí odkaz:
https://doaj.org/article/9a4af872f99e404a8c79efb32fbb58ac
Publikováno v:
Results in Physics, Vol 18, Iss , Pp 103271- (2020)
Four new sp3-hybridized silicon allotropes (Si10, Si14, Si20-I, and Si20-II) in the space groups of P21/m and P2/m were developed in this study. Their values for properties related to stability, and mechanical, electronic, and optical properties were
Externí odkaz:
https://doaj.org/article/b751f66a1ccd4569b36bad25fc8f2da7
Publikováno v:
Micromachines, Vol 13, Iss 1, p 106 (2022)
The self-heating and high-power microwave (HPM) effects that can cause device heating are serious reliability issues for gallium nitride (GaN) high-electron-mobility transistors (HEMT), but the specific mechanisms are disparate. The different impacts
Externí odkaz:
https://doaj.org/article/08cad691dccb4908b4b700ff93600dd2
Publikováno v:
Materials Research Express, Vol 8, Iss 2, p 025908 (2021)
In this work, four III-V compounds in the P 3 _1 21 phase are proposed. Based on density functional theory (DFT), their structures, stability, and mechanical, anisotropic, electronic and optical properties were investigated in detail. P 3 _1 21-AlN/G
Externí odkaz:
https://doaj.org/article/77ddc848594d40c4b0b43a020fa89468
Publikováno v:
Materials, Vol 13, Iss 14, p 3212 (2020)
The structural, mechanical, and electronic properties, as well as stability, elastic anisotropy and effective mass of AlN/GaN/InN in the Pmn21 phase were determined using density functional theory (DFT). The phonon dispersion spectra and elastic cons
Externí odkaz:
https://doaj.org/article/cdd48c3d04c94a6f86795ac9fd807430
Publikováno v:
Materials, Vol 13, Iss 8, p 1926 (2020)
A metastable sp3-bonded carbon allotrope, Penta-C20, consisting entirely of carbon pentagons linked through bridge-like bonds, was proposed and studied in this work for the first time. Its structure, stability, and electronic and mechanical propertie
Externí odkaz:
https://doaj.org/article/d619490529754b5287aa64a9dacbbed9