Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Changbin Nie"'
Publikováno v:
Opto-Electronic Science, Vol 3, Iss 5, Pp 1-9 (2024)
The integration between infrared detection and modern microelectronics offers unique opportunities for compact and high-resolution infrared imaging. However, silicon, the cornerstone of modern microelectronics, can only detect light within a limited
Externí odkaz:
https://doaj.org/article/1a79e70707724400a2052262d449c58a
Autor:
Hao Jiang, Jintao Fu, Jingxuan Wei, Shaojuan Li, Changbin Nie, Feiying Sun, Qing Yang Steve Wu, Mingxiu Liu, Zhaogang Dong, Xingzhan Wei, Weibo Gao, Cheng-Wei Qiu
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract High quantum efficiency and wide-band detection capability are the major thrusts of infrared sensing technology. However, bulk materials with high efficiency have consistently encountered challenges in integration and operational complexity.
Externí odkaz:
https://doaj.org/article/070039db18774abf9c675b9ec25528fd
Autor:
Jintao Fu, Zhongmin Guo, Changbin Nie, Feiying Sun, Genglin Li, Shuanglong Feng, Xingzhan Wei
Publikováno v:
The Innovation, Vol 5, Iss 3, Pp 100600- (2024)
Internal photoemission is a prominent branch of the photoelectric effect and has emerged as a viable method for detecting photons with energies below the semiconductor bandgap. This breakthrough has played a significant role in accelerating the devel
Externí odkaz:
https://doaj.org/article/6d77241055e14e828c4283ee047c766b
Photodetectors Based on Graphene–Semiconductor Hybrid Structures: Recent Progress and Future Outlook
Publikováno v:
Advanced Devices & Instrumentation, Vol 4 (2023)
The integration of graphene and semiconductor leverages the distinct advantages of different materials and unleashes promising photoresponse generation phenomena, thereby facilitating the advancement of high-performance photodetectors. Notably, the v
Externí odkaz:
https://doaj.org/article/2d97a29677564bc69a0be49572e9a8c4
Publikováno v:
Nanomaterials, Vol 13, Iss 2, p 322 (2023)
Position-sensitive detectors (PSDs) are of great significance to optical communication, automatic alignment, and dislocation detection domains, by precisely obtaining the position information of infrared light spots which are invisible to human eyes.
Externí odkaz:
https://doaj.org/article/70bd8514eb714f478f09fbf3f45e858d
Autor:
Jintao Fu1,2, Changbin Nie1,2, Feiying Sun1, Genglin Li1,2, Haofei Shi1,2,3, Xingzhan Wei1,2,3 weixingzhan@cigit.ac.cn
Publikováno v:
Science Advances. 2/16/2024, Vol. 10 Issue 7, p1-10. 10p.
Autor:
Hao Jiang, Mao Wang, Jintao Fu, Zhancheng Li, Mohd Saif Shaikh, YunJie Li, Changbin Nie, Feiying Sun, Linlong Tang, Jun Yang, Tianshi Qin, Dahua Zhou, Jun Shen, Jiuxun Sun, Shuanglong Feng, Meng Zhu, Ulrich Kentsch, Shengqiang Zhou, Haofei Shi, Xingzhan Wei
Publikováno v:
ACS Nano 16(2022)8, 12777-12785
Highly sensitive short-wave infrared (SWIR) detectors, compatible with the silicon-based complementary metal oxide semiconductor (CMOS) process, are regarded as the key enabling components in the miniaturized system for weak signal detection. To date
Publikováno v:
ACS Applied Materials & Interfaces. 14:26245-26254
Autor:
Hao Jiang, Jingxuan Wei, Feiying Sun, Changbin Nie, Jintao Fu, Haofei Shi, Jiuxun Sun, Xingzhan Wei, Cheng-Wei Qiu
Publikováno v:
ACS Nano. 16:4458-4466
Autor:
Jintao Fu, Shuanglong Feng, Xingzhan Wei, Feiying Sun, Changbin Nie, Meng zhu, Jiuxun Sun, Jun Shen, Hao Jiang, Haofei Shi, Linlong Tang
Publikováno v:
Carbon. 184:445-451
In this paper, a position-sensitive detector (PSD) with an enhanced position detection performance has been proposed using graphene-silicon-on-insulator (GSOI) structure. By introducing the gate manipulation, the separation efficiency and diffusion s