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pro vyhledávání: '"Chang-Youn Hwang"'
Autor:
Hyejung Choi, Jinkook Kim, Hyun Min Lee, Jaeyun Yi, Eung-Rim Hwang, Jeongho Song, Tae-Hoon Kim, Donghoon Kim, Su Jin Chae, Myoungsub Kim, Chang-Youn Hwang, Yun-Seok Chun, Sunglae Cho
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
We demonstrate a high-performance and cost-effective cross-point memory (CPM) technology for two-deck 128 Gb storage class memory (SCM). The unit MAT size is 16 Mb consisting of a 2z nm 1S1M (one selector one memory) structure that is patterned by on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dd6f7fd54d04a598e42ca78cad2d4b6
https://doi.org/10.1109/iedm.2018.8614680
https://doi.org/10.1109/iedm.2018.8614680
