Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Chang-Rock Song"'
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5264afcfb0a1d00878cbe837791bdf6
https://doi.org/10.1109/edtm55494.2023.10102981
https://doi.org/10.1109/edtm55494.2023.10102981
Autor:
Dongsub Choi, Sangjun Han, Mark D. Smith, Junbeom Park, Sanghuck Jeon, Jaeson Woo, Pradeep Vukkadala, Kevin Huang, Fatima Anis, Hoyoung Heo, Chang-Rock Song, Honggoo Lee, John C. Robinson
Publikováno v:
SPIE Proceedings.
Process-induced overlay errors from outside the litho cell have become a significant contributor to the overlay error budget including non-uniform wafer stress. Previous studies have shown the correlation between process-induced stress and overlay an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::252bfb06ec97907356c947a266a2d111
https://doi.org/10.1117/12.2257834
https://doi.org/10.1117/12.2257834
Autor:
Irina Brinster, Dongyoung Lee, Dongsub Choi, Honggoo Lee, Jaeson Woo, Hoyoung Heo, Chang-Rock Song, Sangjun Han, John C. Robinson
Publikováno v:
SPIE Proceedings.
Overlay control based on DI metrology of optical targets has been the primary basis for run-to-run process control for many years. In previous work we described a scenario where optical overlay metrology is performed on metrology targets on a high fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b6376ef2b5f84a7c5a8b70e0ecafbd4
https://doi.org/10.1117/12.2257836
https://doi.org/10.1117/12.2257836
Autor:
Kou Weitian, Sangjun Han, Jaesun Woo, Honggoo Lee, Alexander Ypma, Junghwan Moon, Hank Han, Paul Böcker, Daan Slotboom, Marc Hauptmann, Hyun-Woo Yu, Michiel Kupers, Chang-Rock Song
Publikováno v:
SPIE Proceedings.
For the sub-20 nm DRAM nodes, wafer-to-wafer (W2W) variation is one of the major contributors to on-product overlay (OPO). One way to reduce the W2W variation is by applying overlay corrections on wafer level on top of per lot / per chuck corrections
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::755f1205ad3b2ba7fe68cc625dc93e60
https://doi.org/10.1117/12.2259846
https://doi.org/10.1117/12.2259846
Autor:
Han-Ill Yoo, Chang-Rock Song
Publikováno v:
Journal of the American Ceramic Society. 83:773-779
The chemical diffusivity of 1.8 mol% aluminum-doped BaTiO 3-δ was measured on single-crystal specimens, as a function of ambient oxygen partial pressure, in the range 10 -18 atm ≤ P O2 ≤ 1 atm and at temperatures of 800° ≤ T ≤ 1100°C, via
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45dc3bfc4a011fd58a1ee5f29eded5be
https://doi.org/10.1111/j.1151-2916.2000.tb01273.x
https://doi.org/10.1111/j.1151-2916.2000.tb01273.x
Publikováno v:
Journal of Electroceramics. 8:5-36
Electrical conductivity, thermoelectric power, and chemical diffusivity are the most typical, charge-and-mass transport properties of a mixed ionic electronic conductor oxide which are essentially governed by its defect structure, and the oxygen nons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20739a7798248c8bcec939ae626757d9
https://doi.org/10.1023/a:1015570717935
https://doi.org/10.1023/a:1015570717935
Publikováno v:
Integrated Ferroelectrics. 37:3-10
ECD Pt process has been developed as an electrode for sub-0.lμm technology device. Using ECD Pt process, it is possible to fabricate higher. stacked BST capacitor with a lot of advantages such as selective deposition which is storage node patterning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f075fd772239056dd149215bc740464e
https://doi.org/10.1080/10584580108015659
https://doi.org/10.1080/10584580108015659
Autor:
Han-Ill Yoo, Chang-Rock Song
Publikováno v:
Journal of Electroceramics. 6:61-74
Thermoelectricity of mixed ionic electronic conductor BaTiO3+δ is thermodynamically analyzed, and measured across the mixed n/p regime of both undoped and 1.8 m/o A1-doped BaTiO3 at elevated temperatures. There can be 4 different measurement conditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80979ace8c3e2b334000905cbbb9d32c
https://doi.org/10.1023/a:1011425920963
https://doi.org/10.1023/a:1011425920963
Autor:
Chang-Rock Song, Han-Ill Yoo
Publikováno v:
Solid State Ionics. 135:619-623
The chemical diffusion coefficient of BaTiO3−δ was determined by a conductivity relaxation technique as a function of oxygen partial pressure in the range 10−15≤PO2/atm≤1, including an n-to-p-type transition regime, at elevated temperatures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0c8472b98cc868ddaddd8aae023a5c3
https://doi.org/10.1016/s0167-2738(00)00420-3
https://doi.org/10.1016/s0167-2738(00)00420-3
Autor:
Han-Ill Yoo, Chang-Rock Song
Publikováno v:
Electrochemistry. 68:415-422
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a20f530818abd094a62337da4d6533c
https://doi.org/10.5796/electrochemistry.68.415
https://doi.org/10.5796/electrochemistry.68.415