Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Chang-Lyong Song"'
Publikováno v:
SPIE Proceedings.
As the design rules of semiconductor devices have decreased, the detection of critical killer defect has became more important. One of killer defect is under-etch defect caused by insufficient contact etch. Although very low throughput only e-beam in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d51c95dd9b709a8293769a7c5b957e4
https://doi.org/10.1117/12.710746
https://doi.org/10.1117/12.710746
Autor:
Jong Seo Hong, Young-Sun Cho, Soo Bok Chin, Byoung-Ho Lee, Chang Lyong Song, Tae-Yong Lee, Jun Sik Hong
Publikováno v:
SPIE Proceedings.
As the design rule of semiconductor devices shrinks to below 100nm dimensions, the degree of pattern alignment from different process levels has become a crucial factor affecting both process control and induced defect on unit process. Isolated and d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbe8af452fa1077e9fffdbaa1b6a1229
https://doi.org/10.1117/12.656736
https://doi.org/10.1117/12.656736
Autor:
Seok-Woo Nam, Chang-Lyong Song, Hun-Young Lim, Sanghoon Lee, Jung-Hwan Kim, Jae-Duk Lee, Jai-Dong Lee, Woong Lee, Hyeon-deok Lee
Publikováno v:
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..
We studied factors which affect cell Vth variation in the floating gate flash memory. By simulation and experiment, we showed that the shape of STI (shallow trench isolation) and the tunnel oxide thickness in the STI edge were the main control factor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efa388ed15bb5d5de6c6de9c703a3de2
https://doi.org/10.1109/relphy.2005.1493197
https://doi.org/10.1109/relphy.2005.1493197
Autor:
Soo Bok Chin, Do Hyun Cho, Dongchul Ihm, Byoung-Ho Lee, Hyo Cheon Kang, Chang Lyong Song, Jum Bun Lee, Tae-Yong Lee
Publikováno v:
SPIE Proceedings.
The measurement of edge roughness has become a hot issue in the semiconductor industry. Especially the contact roughness is being more critical as design rule shrinks. Major vendors offer a variety of features to measure the edge roughness in their C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7495b53c8f2240b119dc9596aeb9292f
https://doi.org/10.1117/12.597948
https://doi.org/10.1117/12.597948
Autor:
Luca Grella, Chang-Lyong Song, Byoung-Ho Lee, Tae-Yong Lee, Do-Hyun Cho, Jorge P. Fernandez, Domingo Choi, Soo-Bok Chin
Publikováno v:
SPIE Proceedings.
As the design rules of semiconductor devices continue to decrease, the detection of critical killer defects has become more difficult. In this paper, μ-bridge defects are studied. In order to detect special μ-bridges, both direct inspection and sim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5099cd3a29808db7c242d9b136b2422
https://doi.org/10.1117/12.596473
https://doi.org/10.1117/12.596473
Autor:
Kyung-Mun Byun, Yong-Won Cha, Kim Min, Hyeon-deok Lee, In-Sun Park, Chang-Lyong Song, Sang-Hyeon Lee, Do-hyung Kim, Joo-Beom Lee
Publikováno v:
2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005..
We have attempted to reduce the plasma-induced damage to the thin gate oxides during intermetal dielectric (IMD) gap-fill process by high-density plasma (HDP) chemical vapor deposition (CVD). It was revealed that the optimization of preheating step c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76f052177946b8b542a2cf6d4a001172
https://doi.org/10.1109/icicdt.2005.1502601
https://doi.org/10.1109/icicdt.2005.1502601
Autor:
Chang-Lyong Song, Kyung-hyun Kim, Ki-Hoon Jang, Kwang-Bok Kim, Joung-Duk Ko, Yong-Sun Ko, In-Seac Hwang, Hyojin Lee
Publikováno v:
MRS Proceedings. 816
CMP(Chemical Mechanical Planarization) process is widely used to reduce step height in semiconductor fabrication processes. As a design rule shrinks, a highly planar surface becomes inevitable within wafer scales. In order to get a high degree of a p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9784d56686ddb412600f113aa78915b7
https://doi.org/10.1557/proc-816-k4.2
https://doi.org/10.1557/proc-816-k4.2
Autor:
Kong-Soo Lee, Ki-Hyun Hwang, Hyeon-deok Lee, Seung-Mok Shin, Jae-Jong Ban, Chang-Lyong Song, Seok-Woo Nam
Publikováno v:
2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..
Abnormal gate oxide thickening at active edge (GOTAE) has been investigated in dynamic random access memories (DRAMs) with SiN-lineared shallow trench isolation (STI). 1% of gaseous HCl, which is added during dry oxidation, plays a major role in indu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56181868bbdae0b5e611db011d0ff683
https://doi.org/10.1109/relphy.2003.1197731
https://doi.org/10.1109/relphy.2003.1197731
Autor:
Hyoung-Kook Kim, Yong-Sun Koh, Chang-Lyong Song, Dae-Joung Kim, Young-Seok Kim, Chun-Suk Suh, Seok-Hwan Oh
Publikováno v:
SPIE Proceedings.
As the design rule of device has shrunken, obtaining a feasible process window at low k1 factor in photolithography is the major concerning in order to shorten the total period from development to the mass production of devices. In this low k1 factor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d91b89d9baf0285c5beba356c18844f7
https://doi.org/10.1117/12.474522
https://doi.org/10.1117/12.474522
Publikováno v:
SPIE Proceedings.
Understanding the nature of photo-resist (PR) dissolution during the development process is the important factor to accomplish high-precision critical dimension (CD) control in photolithography. In this report, we investigate the effect of each proce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae48c4b9b8e87948a195b8cc8d1da9fa
https://doi.org/10.1117/12.436875
https://doi.org/10.1117/12.436875