Zobrazeno 1 - 10
of 101
pro vyhledávání: '"Chang-Luen Wu"'
Autor:
Chien Hua Yu, Chu An Chiu, Chang Luen Wu, Tsu Yi Wu, Yeong-Her Wang, Jian Xuan Xu, Po Wen Sze, Chih Chun Hu
Publikováno v:
Vacuum. 118:142-146
AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with a liquid phase deposited (LPD) ZrO2 thin film as gate insulator was fabricated. Compared with the conventional HEMT, the maximum drain current increases from 492 to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82a82f4a28f603e0956254fe828c8058
https://doi.org/10.1016/j.vacuum.2015.01.012
https://doi.org/10.1016/j.vacuum.2015.01.012
Autor:
Wen-Ching Sun, Sung-Yen Wei, Ching-Sung Lee, Wei-Chou Hsu, Bo-Yi Chou, Han-Yin Liu, Sheng-Min Yu, Chang-Luen Wu, Cheng-Long Yang
Publikováno v:
IEEE Transactions on Electron Devices. 62:1460-1466
Comparative studies for TiO2-passivated Al0.25Ga0.75N/GaN heterostructure FETs (HFETs) and TiO2-dielectric MOS-HFETs using nonvacuum ultrasonic spray pyrolysis deposition technique are made. Optimum device performances are obtained by tuning the laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f96139d30db2e74dff3eac69275f46e
https://doi.org/10.1109/ted.2015.2414947
https://doi.org/10.1109/ted.2015.2414947
Autor:
Hsien-Chin Chiu, Chih-Wei Yang, Jen-Inn Chyi, Chian-Sern Chang, Yue-Ming Hsin, Hsiang-Chun Wang, Chang-Luen Wu
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 14:726-731
This work develops a thermally stable micromachined AlGaN/GaN high-electron mobility transistor (HEMT) with an enhanced breakdown voltage. After removal of the Si substrate beneath the HEMT, a 300-nm $\hbox{SiO}_{2}$ and a 20- $\mu\hbox{m}$ copper la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67dc49acc0ef4f7f2d15e491b1a73553
https://doi.org/10.1109/tdmr.2014.2317001
https://doi.org/10.1109/tdmr.2014.2317001
Autor:
Lung-Yi Tseng, Han-Yin Liu, Ching-Sung Lee, Wei-Chou Hsu, Bo-Yi Chou, Chiu-Sheng Ho, Chang-Luen Wu
Publikováno v:
IEEE Transactions on Electron Devices. 60:2231-2237
Al0.3Ga0.7N/AlN/GaN metal-oxide-semiconductor high electron mobility transistors (HEMTs) grown on Si substrates by using ozone water oxidation method are investigated. Superior improvements of 52.2% in two-terminal gate-drain breakdown voltage (BVGD)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6346739c56e5d832af5d481ce5ddadf1
https://doi.org/10.1109/ted.2013.2260753
https://doi.org/10.1109/ted.2013.2260753
Autor:
Po Wen Sze, Yeong-Her Wang, Chang Luen Wu, Tsu Yi Wu, Feri Adriyanto, Tong Jyun Huang, Chih Chun Hu
Publikováno v:
Solid-State Electronics. 82:1-5
SrTiO 3 thin films were deposited on AlGaN/GaN wafer by a simple, low-temperature liquid-phase deposition (LPD) method, and applied as the gate dielectric in metal oxide semiconductor high electron mobility transistor (MOSHEMT). X-ray diffraction and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d52ff9d0b4829f02cabe806cf7310cb0
https://doi.org/10.1016/j.sse.2013.01.020
https://doi.org/10.1016/j.sse.2013.01.020
Autor:
Chih-Chun Hu, Mon-Sen Lin, Yeong-Her Wang, Po-Wen Sze, Chang-Luen Wu, Feri Adriyanto, Tsu-Yi Wu
Publikováno v:
IEEE Transactions on Electron Devices. 59:121-127
Barium-doped TiO2 films deposited on GaN layers at low temperature through a simple liquid phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) is a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25d1437bb630d7177fe75897ff586b8b
https://doi.org/10.1109/ted.2011.2171690
https://doi.org/10.1109/ted.2011.2171690
Autor:
Chih Chun Hu, Tong Jyun Huang, Feri Adriyanto, Tsu Yi Wu, Po Wen Sze, Yeong-Her Wang, Chang Luen Wu
Publikováno v:
ECS Transactions. 41:423-428
Through a simple, low-temperature liquid-phase deposition (LPD) method, SrTiO3 thin films were deposited on GaN as the gate dielectric for metal oxide semiconductor high electron mobility transistor application. X-ray photoelectron spectroscopy was e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0a961f6a1a6535fdb59847797711483
https://doi.org/10.1149/1.3633057
https://doi.org/10.1149/1.3633057
Autor:
Sheng-Han Yang, Ching-Sung Lee, Bo-Yi Chou, Don-Gey Liu, Wei-Chou Hsu, Chang-Luen Wu, Wen Luh Yang, Ming-Yuan Lin
Publikováno v:
IEEE Transactions on Electron Devices. 58:2981-2989
A novel Γ-gate Al0.24Ga0.76As/In0.15Ga0.85As metal-oxide-semiconductor (MOS) high-electron-mobility transistor (MOS-HEMT) by using methods of ozone water oxidation and shifted exposure has been comprehensively investigated. Effective gate-length red
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eacb21b282aa10924ed0494b9b471335
https://doi.org/10.1109/ted.2011.2158650
https://doi.org/10.1109/ted.2011.2158650
Publikováno v:
IEEE Transactions on Electron Devices. 55:838-843
We report a high effective work function (Phim-eff) and a very low Vt Ir gate on HfLaO p-MOSFETs using novel self-aligned low-temperature shallow junctions. This gate-first process has shallow junctions of 9.6 or 20 nm that are formed by solid phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f567ee72dd4311f62a7c06cfb4b28040
https://doi.org/10.1109/ted.2007.915060
https://doi.org/10.1109/ted.2007.915060
Publikováno v:
Microwave and Optical Technology Letters. 50:2135-2138
A 26–38 GHz millimeter-wave (MMW) band sub-harmonic mixer has been designed using a 0.15-μm GaAs pseudomorphic high-electron-mobility transistor (pHEMT) technology. The anti-parallel diode pair (APDP) configuration as the basic unit in this sub-ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::262f27dc287b4288e57804dcb6efc3a7
https://doi.org/10.1002/mop.23595
https://doi.org/10.1002/mop.23595