Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Chang-Lee Chen"'
Autor:
Chang,Lee-Chen, 張麗珍
104
Tour leader in the tourism industry personnel management issues gradually received wide attentions and discussions, but the discussions concerning tour leaders Professional Identity and its influencing factors received much less attentions.
Tour leader in the tourism industry personnel management issues gradually received wide attentions and discussions, but the discussions concerning tour leaders Professional Identity and its influencing factors received much less attentions.
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/8vr4y6
Autor:
Wei Wang, Reza Navid, Tze Wee Chen, Robert W. Dutton, Jung-Hoon Chun, Yi-Chang Lu, Chang-Lee Chen
Publikováno v:
IEEE Transactions on Electron Devices. 56:656-664
Thermal test structures and ring oscillators (ROs) are fabricated in 0.18-mum three-dimensional (3-D)-SOI technology. Measurements and electrothermal simulations show that thermal and parasitic effects due to 3-D packaging have a significant impact o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cb898447db7428969f4f0bbf5529476
https://doi.org/10.1109/ted.2009.2014188
https://doi.org/10.1109/ted.2009.2014188
Autor:
Peter W. Wyatt, K. Warner, Robert Berger, Brian Tyrrell, Brian F. Aull, J.M. Knecht, Vyshnavi Suntharalingam, Bruce Wheeler, Chang-Lee Chen, Chenson Chen, A.M. Soares, J.A. Burns, P. M. Gouker, Donna Yost, Nisha Checka, Craig L. Keast
Publikováno v:
Handbook of 3D Integration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d61459871cf9dbbb861452a8b2a3842b
https://doi.org/10.1002/9783527623051.ch20
https://doi.org/10.1002/9783527623051.ch20
Autor:
Craig L. Keast, K. Warner, Peter W. Wyatt, Brian F. Aull, Chenson Chen, Vyshnavi Suntharalingam, Chang-Lee Chen, D.-R. Yost, J.A. Burns, J.M. Knecht
Publikováno v:
IEEE Transactions on Electron Devices. 53:2507-2516
The rationale and development of a wafer-scale three-dimensional (3-D) integrated circuit technology are described. The essential elements of the 3-D technology are integrated circuit fabrication on silicon-on-insulator wafers, precision wafer-wafer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2986f3dc74c11188dc56c8eeb57243ba
https://doi.org/10.1109/ted.2006.882043
https://doi.org/10.1109/ted.2006.882043
Autor:
Chang-Lee Chen
Publikováno v:
Microwave and Optical Technology Letters. 36:462-465
Spiral inductors with various metal fill-patterns under the spiral is fabricated with SOI CMOS technology and characterized up to 49 GHz. The impact of the fill on the inductor characteristics is found to be very small and changes can be attributed t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72c406570c08d45c30506323db2cb6d0
https://doi.org/10.1002/mop.10790
https://doi.org/10.1002/mop.10790
Autor:
Chang-Lee Chen, P.A. Maki, S.D. Calawa, J.P. Sage, T.C.L.G. Sollner, R. H. Mathews, L.J. Mahoney, K.M. Molvar
Publikováno v:
Proceedings of the IEEE. 87:596-605
We describe a new family of clocked logic gates based on the resonant-tunneling diode (RTD). Pairs of RTDs form storage latches, and these are connected by networks consisting of field-effect transistors (FETs), saturated resistors, and RTDs. The des
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8090256068af36d5a5bac06230ad3d31
https://doi.org/10.1109/5.752517
https://doi.org/10.1109/5.752517
Autor:
Chang-Lee Chen
Publikováno v:
IEEE Transactions on Electron Devices. 43:535-542
Gate-breakdown mechanisms in GaAs MESFETs have been studied by numerical simulation. The devices simulated include normal passivated and unpassivated MESFETs as well as overlapping-gate MESFETs passivated with low-temperature-grown (LTG) GaAs, normal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::116e39f83972a1e2ab04a424687f7bec
https://doi.org/10.1109/16.485534
https://doi.org/10.1109/16.485534
Publikováno v:
IEEE 2011 International SOI Conference.
Solar cells embedded in the SOI substrate were successfully used as the sole energy source to power a ring oscillator fabricated using an ultra-low-power fully depleted SOI process on the same wafer. The speed of the ring oscillator increased with in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec314b0170b54d6eae1518cf1bac10d8
https://doi.org/10.1109/soi.2011.6081793
https://doi.org/10.1109/soi.2011.6081793
Autor:
James Burns, Brian Aull, Robert Berger, Nisha Checka, Chang-Lee Chen, Chenson Chen, Pascale Gouker, Craig Keast, Jeffrey Knecht, Antonio Soares, Vyshnavi Suntharalingam, Brian Tyrrell, Keith Warner, Bruce Wheeler, Peter Wyatt, Donna Yost
Publikováno v:
Integrated Circuits and Systems ISBN: 9780387765327
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79cc642df192ac4b45e70ffd446b94e6
https://doi.org/10.1007/978-0-387-76534-1_8
https://doi.org/10.1007/978-0-387-76534-1_8
Autor:
A.R. Calawa, L.J. Mahoney, J.C. Huang, Chang-Lee Chen, M.J. Manfra, F.H. Spooner, F. W. Smith
Publikováno v:
IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings..
A new buffer layer has been developed that eliminates backgating in GaAs MESFET's and substantially reduces short-channel effects in GaAs MESFET's with 0.27-/spl mu/m-long gates. The new buffer is grown by molecular beam epitaxy at a substrate temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::987080f5bbe1a06fdeab1a20d933946f
https://doi.org/10.1109/cornel.1987.721232
https://doi.org/10.1109/cornel.1987.721232