Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Chang-Kyo Kim"'
Publikováno v:
Journal of Information Display, Pp 1-8 (2024)
We developed a high-performance CdSe/ZnS quantum-dot light-emitting diode (QLED) incorporating a hole injection layer (HIL) composed of a solution-processed vanadium oxide (VO) and molybdenum oxide (MoO) mixture. The QLED with a VO:MoO ratio of 1:1 i
Externí odkaz:
https://doaj.org/article/b942d3f7c7854c60bac7569a0e926d0d
Publikováno v:
Nanomaterials, Vol 14, Iss 3, p 266 (2024)
Many quantum dot light-emitting diodes (QLEDs) utilize ZnO nanoparticles (NPs) as an electron injection layer (EIL). However, the use of the ZnO NP EIL material often results in a charge imbalance within the quantum dot (QD) emitting layer (EML) and
Externí odkaz:
https://doaj.org/article/ab4ae7c8a2024562930596a937ed1726
Autor:
Ji-Hun Yang, Gyeong-Pil Jang, Su-Young Kim, Young-Bin Chae, Kyoung-Ho Lee, Dae-Gyu Moon, Chang-Kyo Kim
Publikováno v:
Nanomaterials, Vol 13, Iss 16, p 2324 (2023)
This paper presents a study that aims to enhance the performance of quantum dot light-emitting didoes (QLEDs) by employing a solution-processed molybdenum oxide (MoOx) nanoparticle (NP) as a hole injection layer (HIL). The study investigates the impa
Externí odkaz:
https://doaj.org/article/c8d6e04c982d4fa396e106449297c2a9
Autor:
Ye-Bin Eun, Gyeong-Pil Jang, Ji-Hun Yang, Su-Young Kim, Young-Bin Chae, Mi-Young Ha, Dae-Gyu Moon, Chang-Kyo Kim
Publikováno v:
Materials, Vol 16, Iss 2, p 600 (2023)
Highly efficient and all-solution processed quantum dot light-emitting diodes (QLEDs) with high performance are demonstrated by employing ZnMgO nanoparticles (NPs) with core/shell structure used as an electron transport layer (ETL). Mg-doping in ZnO
Externí odkaz:
https://doaj.org/article/93168b3dd4064c64ac317083f862dc1e
Publikováno v:
Molecular Crystals and Liquid Crystals. 735:51-60
We prepared quantum dot light-emitting diodes (QLEDs) with a tungsten oxide (WO3) hole injection layer (HIL) produced via thermal evaporation. Placement of a WO3 layer between the indium tin oxide ...
Publikováno v:
Molecular Crystals and Liquid Crystals. 735:61-74
Mg-doped ZnO nanoparticle (NP) thin-film transistors (TFTs) were fabricated using a solution process under a range of Mg content and annealing temperature conditions. The effects of Mg doping and a...
Publikováno v:
Journal of Nanoscience and Nanotechnology. 21:3747-3752
In this paper, we reported superior performance of solution-processed top-emission quantum dot light-emitting diodes (TE-QLEDs) with Mg-doped ZnO nanoparticle (NP) electron transport layer (ETL). The Mg-doped ZnO NPs were synthesized by the sol-gel m
Publikováno v:
Molecular Crystals and Liquid Crystals. 678:43-52
ZnO thin film transistors (TFTs) were fabricated through annealing of ZnO thin films at temperatures ranging from 250 °C to 400 °C. ZnO nanoparticles (NPs) synthesized via a sol-gel method ...
Publikováno v:
Journal of nanoscience and nanotechnology. 21(7)
Zinc oxide nanoparticles (ZnO NPs) have been widely used as an inorganic electron transport layer (ETL) in quantum dot light-emitting devices (QLEDs) due to their excellent electrical properties. Here, we report the effect of ZnO NPs inorganic ETL of
Autor:
Boram Hwang, Yebin Eun, Gyeong-Pil Jang, Ji-Hun Yang, Mi-Young Ha, Dae-Gyu Moon, Chang Kyo Kim
Publikováno v:
physica status solidi (a). 219:2100856