Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Chang-Jin Sohn"'
Publikováno v:
Proceedings of SPIE; 2/18/2017, Vol. 10273, p11-29, 19p
Autor:
Han-Ku Cho, Christopher J. Raymond, Suk-Joo Lee, Joo-Tae Moon, Chang-Jin Sohn, Seong-Jin Kim, Michael E. Littau, Byungjoo James Youn, Sang-Gyun Woo, Jin Ah Kim, Seok-Hwan Oh, Soo-Bok Chin, Woo-Sung Han, Doo-Hoon Goo
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XVIII.
As DRAM (Dynamic Random Access Memory) device continuously decreases in chip size, an increased speed and more accurate metrology technique is needed to measure CD (critical dimension), film thickness and vertical profile. Scatterometry is an optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac969a1a6aa0924619dada3584ca277b
https://doi.org/10.1117/12.536312
https://doi.org/10.1117/12.536312
Autor:
Byoungjoo James Youn, Young Seog Kang, Chang-Jin Sohn, Christopher J. Raymond, Michael E. Littau, Jin Ah Kim
Publikováno v:
SPIE Proceedings.
Scatterometry is a novel optical metrology based on the analysis of light diffracted from a periodic sample. In the past the technology has been applied successfully to a variety of different grating types found in the manufacture of microelectronic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83c33779f8278889d13e6c148579af24
https://doi.org/10.1117/12.488116
https://doi.org/10.1117/12.488116
Autor:
Chang-Jin Sohn, Keeho Kim, Hoyoung Kang, Yongbeom Kim, Young-Bum Koh, Woo-Sung Han, Moon Yong Lee
Publikováno v:
SPIE Proceedings.
When small feature delineation is considered using existing exposure tools, special techniques might be needed such as phase shift mask, oblique illumination, top surface imaging, etc. When different types of patterns exist simultaneously or island p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4aad172ce8fdae16e5c80d6bdda95b3
https://doi.org/10.1117/12.209279
https://doi.org/10.1117/12.209279
Autor:
Moon Yong Lee, Young-Bum Koh, Sang-Gyun Woo, Seong-Yong Moon, Chul Hong Kim, Chang-Jin Sohn, Woo-Sung Han
Publikováno v:
SPIE Proceedings.
Since island patterns are subject to optical proximity effect, it is not easy to maintain island patterns as good image as same sized periodic lines with a conventional lithographic method such as a chrome transmission mask and on-axis illumination.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e59d16fa49154afcc2eb99d52492965
https://doi.org/10.1117/12.209303
https://doi.org/10.1117/12.209303
Publikováno v:
SPIE Proceedings.
As device density increases, topography gets more severe and optical proximity effect becomes worse. If light intensity can be controlled for individual patterns, linewidth variation over topography and optical proximity effect can also be minimized.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48c2528ef6fe01a9d80692124fd9c3ef
https://doi.org/10.1117/12.175408
https://doi.org/10.1117/12.175408
Publikováno v:
SPIE Proceedings.
Because lithographic patterns' quality is functions of quality of aerial image, resist behavior, substrate conditions, topography, etc., pattern quality can be significantly improved if all of those factors are improved simultaneously. In this paper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f2264e5d5e617097b0a813e1265b85e
https://doi.org/10.1117/12.175427
https://doi.org/10.1117/12.175427
Publikováno v:
64-to 256-Megabit Reticle Generation: Technology Requirements and Approaches: A Critical Review.
In the past, the wafer pattern dimension was same as the mask pattern dimension because 1x exposure tool was widely used until 64KDRAM era. With the introduction of 5x stepper, required mask pattern dimension became five times larger and writing area
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e73fb211639d08ff9958001e5d04f1dd
https://doi.org/10.1117/12.177436
https://doi.org/10.1117/12.177436
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