Zobrazeno 1 - 10
of 405
pro vyhledávání: '"Chang-Il Kim"'
Autor:
Kwang Bok Kim, Jun-Hee Kim, Je-Eon Jin, Hae-Jin Kim, Chang-Il Kim, Bong Ki Kim, Jun-Gill Kang
Publikováno v:
Applied Sciences, Vol 13, Iss 17, p 9814 (2023)
An acoustic emission (AE) is caused by the sudden release of energy by a material as a result of material degradation related to deformations, cracks, or faults within a solid. The same situation also occurs in leaks caused by turbulence in the fluid
Externí odkaz:
https://doaj.org/article/23da978ebdf04062badcd1a028606a0a
Autor:
Han Byeol Lee, Young-Hee Joo, Harshada Patil, Gwan-Ha Kim, Insu Kang, Bo Hou, Deok-kee Kim, Doo-Seung Um, Chang-Il Kim
Publikováno v:
Materials Research Express, Vol 10, Iss 1, p 016401 (2023)
Due to its high dielectric constant ( κ ), the BaTiO _3 (BTO) thin film has significant potential as a next-generation dielectric material for metal oxide semiconductor field-effect transistors (MOSFETs). Hence, the evaluation of the BTO thin film e
Externí odkaz:
https://doaj.org/article/54e6b07317d74be7ba8b66811ac6db40
Publikováno v:
Infrastructures, Vol 8, Iss 2, p 20 (2023)
A traffic sign recognition system is crucial for safely operating an autonomous driving car and efficiently managing road facilities. Recent studies on traffic sign recognition tasks show significant advances in terms of accuracy on several benchmark
Externí odkaz:
https://doaj.org/article/692f7a91e08f43eeb6ab52d4c1817164
Publikováno v:
Materials Research Express, Vol 8, Iss 12, p 126402 (2021)
Al-doped ZnO (AZO) is a promising transparent conducting oxide that can replace indium tin oxide (ITO) owing to its excellent flexibility and eco-friendly characteristics. However, it is difficult to immediately replace ITO with AZO because of the di
Externí odkaz:
https://doaj.org/article/3a3842acb7cf43ac98912cb3f4f0149f
High-density plasma etching characteristics of aluminum-doped zinc oxide thin films in Cl2/Ar plasma
Publikováno v:
Materials Research Express, Vol 7, Iss 10, p 106301 (2020)
We investigated the etching characteristics of aluminum-doped zinc oxide (AZO) thin films in an adaptively coupled plasma (ACP) system. The dry etching characteristics of AZO films were studied by changing the Cl _2 /Ar gas mixing ratio, RF power, DC
Externí odkaz:
https://doaj.org/article/ff00a24805f54272b5f656e96e4d5dab
Autor:
Sejin Kim, Dong-Geon Lee, Qiang Liu, Mi-Jin Jin, Bo Hou, Seungyoung Park, Ji-Yeop Kim, Doo-Seung Um, Chang-Il Kim
Publikováno v:
Sensors & Materials; 2024, Vol. 36 Issue 9, Part 1, p3677-3690, 14p
Autor:
Chokkakula, Santosh, Sol Oh, Won-Suk Choi, Chang Il Kim, Ju Hwan Jeong, Beom Kyu Kim, Ji- Hyun Park, Seong Cheol Min, Eung-Gook Kim, Yun Hee Baek, Young Ki Choi, Min-Suk Song
Publikováno v:
Emerging Microbes & Infections; Dec2024, Vol. 13 Issue 1, p1-16, 16p
Publikováno v:
Plasma Science and Technology.
Indium gallium tin oxide (IGTO) thin films have the potential for high mobility and low-temperature processing, which makes them suitable for applications such as display backplanes and high-voltage switching devices. However, very few studies have i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6613effbacc101537e1437cd3c73193
https://doi.org/10.1088/2058-6272/acd588
https://doi.org/10.1088/2058-6272/acd588
Autor:
Dong-Hwan Jung, Jong-Hee Kim, Myung-soo Park, Hyun-jung Song, Jihoon Kim, Chang-il Kim, Hae-yong Cho
Publikováno v:
Transactions of the Korean Society of Mechanical Engineers - A. 45:825-833
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adab39c975422239a4aec94f13439fb8
https://doi.org/10.3795/ksme-a.2021.45.10.825
https://doi.org/10.3795/ksme-a.2021.45.10.825