Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Chang-Hyeon Jo"'
Publikováno v:
Journal of Asian Ceramic Societies, Vol 11, Iss 1, Pp 68-79 (2023)
ABSTRACTOwing to its wide bandgap (3.4 eV) and high electron mobility, GaN has attracted significant attention for applications in solar cells, power transistors, and high-electron-mobility transistors. Crystallized GaN thin film can be hardly prepar
Externí odkaz:
https://doaj.org/article/9cda204bd30644a5adb722bcf00dad10
Publikováno v:
Journal of Asian Ceramic Societies. 11:68-79
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41b7789e7253a02eb436dae65bc15652
https://doi.org/10.1080/21870764.2022.2151102
https://doi.org/10.1080/21870764.2022.2151102
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 16:738-743
Power metal-oxide-semiconductor field-effect-transistors (MOSFET) is a high voltage control device that requires high reliability and efficiency and is used to improve efficiency in areas such as renewable energy generators, electric vehicles, power
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28d6da38a6ae0e3851533d9308cb7e70
https://doi.org/10.1166/jno.2021.3004
https://doi.org/10.1166/jno.2021.3004
Publikováno v:
Journal of the Korean Society for information Management. 24:227-250
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f48b7fef2d5592e03aa70fef90eb1a5
https://doi.org/10.3743/kosim.2007.24.1.227
https://doi.org/10.3743/kosim.2007.24.1.227