Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Chang-Hsun Huang"'
Publikováno v:
Advanced Science, Vol 11, Iss 41, Pp n/a-n/a (2024)
Abstract Free‐standing gallium nitride has been prepared using various methods; however, the removal of the original substrate is still challenging with low success rates. In this work, 2‐inch free‐standing GaN films are obtained by direct grow
Externí odkaz:
https://doaj.org/article/feeea4ee58124cb6bd4ce74782ca4d16
Publikováno v:
Advanced Science, Vol 11, Iss 36, Pp n/a-n/a (2024)
Abstract Nociceptors are key sensory receptors that transmit warning signals to the central nervous system in response to painful stimuli. This fundamental process is emulated in an electronic device by developing a novel artificial nociceptor with a
Externí odkaz:
https://doaj.org/article/44d033da7b8447ba9884f7bbd99a3090
Publikováno v:
ACS Applied Materials & Interfaces. 15:25838-25848
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d272ec127f803509f473513f59a4e43
https://doi.org/10.1021/acsami.3c03002
https://doi.org/10.1021/acsami.3c03002
Autor:
Chang-Hsun Huang, Yi-Chia Chou
Publikováno v:
ACS Applied Nano Materials. 3:8949-8957
We introduce a pit-formation method on a GaN substrate to obtain ultra-long GaN nanorods (NRs) grown homoepitaxially through hydride vapor phase epitaxy (HVPE) without an additional catalyst or a c...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::930614f2e5c477a630b378b33c65c1e4
https://doi.org/10.1021/acsanm.0c01658
https://doi.org/10.1021/acsanm.0c01658
Publikováno v:
The Journal of Physical Chemistry C. 123:3172-3179
We propose a simple and low-cost approach using irregular mask for growing GaN nanorods (NRs) bottom up on a freestanding GaN substrate through hydride vapor-phase epitaxy. The irregular mask consists of uncoalesced SiO2 islands deposited by plasma-e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a09fb2dd035ef1867864eb2cd2e9fef8
https://doi.org/10.1021/acs.jpcc.8b10254
https://doi.org/10.1021/acs.jpcc.8b10254
Publikováno v:
CrystEngComm. 21:4298-4304
We investigated the vapor–solid–solid growth of Si nanowires from Ni silicides on Si(111), Si(110), and GaN substrates. The morphology and structures of Si on these substrates are distinct, and are dependent on substrate lattices and an epitaxy p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e29e3a0e5ab0d85c389c9da4b469376d
https://doi.org/10.1039/c9ce00539k
https://doi.org/10.1039/c9ce00539k
Autor:
Chiao-Wei Tseng, Nan Meng, Chang-Hsun Huang, Jiyue Wu, Zhen Zhang, Yi-Chia Chou, Haixue Yan, Haibin Zhang, Vladimir Koval
Publikováno v:
Nano Energy. 76:105037
Due to the worldwide concerns of environmental protection and sustainable development, lead-free piezoelectric materials are greatly desired for bridging the electrical energy to the mechanical energy. However, their lower energy conversion coefficie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90762ec975aed3f653f5458314c32fd3
https://doi.org/10.1016/j.nanoen.2020.105037
https://doi.org/10.1016/j.nanoen.2020.105037