Zobrazeno 1 - 10
of 160
pro vyhledávání: '"Chang-Hong Shen"'
Autor:
Ying-Chun Shen, Bang-Kai Wu, Tsung-Shun Tsai, Mingjin Liu, Jyun-Hong Chen, Tzu-Yi Yang, Ruei-Hong Cyu, Chieh-Ting Chen, Yu-Chieh Hsu, Chai-Hung Luo, Yu-Qi Huang, Yu-Ren Peng, Chang-Hong Shen, Yen-Fu Lin, Po-Wen Chiu, Ya-Chin King, Yu-Lun Chueh
Publikováno v:
Small Science, Vol 4, Iss 2, Pp n/a-n/a (2024)
A top‐down transfer process is developed via a rolling process associated with thermal release tape/poly(methyl methacrylate) (PMMA) bi‐supporting layers to realize large‐scale transfer processes on transition metal dichalcogenide materials. A
Externí odkaz:
https://doaj.org/article/6b2b122fd0cc4bc890c37faa68f3a2b0
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 12, Pp n/a-n/a (2023)
Abstract A pulsed laser annealing method is utilized to directly synthesize nickel silicide (NiSi) as a contact material to improve the contact of electric devices. Three laser wavelengths, 355 nm (ultraviolet laser), 532 nm (green laser), and 1064 n
Externí odkaz:
https://doaj.org/article/f64d202f63564b9997473fb527c58ce5
Autor:
Hao-Tung Chung, Yu-Ming Pan, Nein-Chih Lin, Bo-Jheng Shih, Chih-Chao Yang, Chang-Hong Shen, Huang-Chung Cheng, Kuan-Neng Chen
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 262-268 (2023)
This paper proposed a fabrication of p-type Germanium (Ge) tri-gate field-effect transistors (Tri-gate FETs) via green nanosecond laser crystallization (GNSLC) and counter doping (CD). By using the GNSLC, the nano-crystalline-Ge (nc-Ge) with a grain
Externí odkaz:
https://doaj.org/article/ef4cc10c6b1946188bd1a720f82eb48b
Autor:
Akshay Krishna Ramanathan, Srivatsa Srinivasa Rangachar, Hariram Thirucherai Govindarajan, Je-Min Hung, Chun-Ying Lee, Cheng-Xin Xue, Sheng-Po Huang, Fu-Kuo Hsueh, Chang-Hong Shen, Jia-Min Shieh, Wen-Kuan Yeh, Mon-Shu Ho, Jack Sampson, Meng-Fan Chang, Vijaykrishnan Narayanan
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 7, Iss 1, Pp 79-87 (2021)
The compare operation is widely used in many applications, from fundamental sorting to primitive operations in the database and AI systems. We present SRAM-based 3-D-CAM circuit designs using a monolithic 3-D (M3D) integration process for realizing b
Externí odkaz:
https://doaj.org/article/07f164221d6348c2a5e1b6f7338a62ae
Autor:
Catherine Langpoklakpam, An-Chen Liu, Neng-Jie You, Ming-Hsuan Kao, Wen-Hsien Huang, Chang-Hong Shen, Jerry Tzou, Hao-Chung Kuo, Jia-Min Shieh
Publikováno v:
Micromachines, Vol 14, Iss 3, p 576 (2023)
In this study, we report a low ohmic contact resistance process on a 650 V E-mode p-GaN gate HEMT structure. An amorphous silicon (a-Si) assisted layer was inserted in between the ohmic contact and GaN. The fabricated device exhibits a lower contact
Externí odkaz:
https://doaj.org/article/93338f7dd6d141c7b2dd805a523717ef
Autor:
Tsung-Ta Wu, Wen-Hsien Huang, Chih-Chao Yang, Hung-Chun Chen, Tung-Ying Hsieh, Wei-Sheng Lin, Ming-Hsuan Kao, Chiu-Hao Chen, Jie-Yi Yao, Yi-Ling Jian, Chiung-Chih Hsu, Kun-Lin Lin, Chang-Hong Shen, Yu-Lun Chueh, Jia-Min Shieh
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)
Abstract Development of manufacture trend for TFTs technologies has focused on improving electrical properties of films with the cost reduction to achieve commercialization. To achieve this goal, high-performance sub-50 nm TFTs-based MOSFETs with ON-
Externí odkaz:
https://doaj.org/article/dfca7c0d50a149839d75f7508a8ac08d
Autor:
An-Jye Tzou, Kuo-Hsiung Chu, I-Feng Lin, Erik Østreng, Yung-Sheng Fang, Xiao-Peng Wu, Bo-Wei Wu, Chang-Hong Shen, Jia-Ming Shieh, Wen-Kuan Yeh, Chun-Yen Chang, Hao-Chung Kuo
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)
Abstract We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of
Externí odkaz:
https://doaj.org/article/945f8143dd884710b65adb49f7f16dcb
Autor:
Albert S. Lin, Parag Parashar, Chih-Chieh Yang, Wei-Ming Huang, Yi-Wen Huang, Ding-Rung Jian, Ming-Hsuan Kao, Shi-Wei Chen, Chang-Hong Shen, Jia-Min Shieh, Tseung Yuen Tseng
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 5, Pp 1-9 (2017)
It is widely known that thinner Si substrate is the main path for lower $/Watt HIT solar cells due to improved charge collection, reduced bulk and total recombination, and fewer raw material consumption (Panasonic, IEEE Journal of Photovoltaics., vol
Externí odkaz:
https://doaj.org/article/4aea7dbd377a4fa386c23b8aa727812e
Autor:
Yao-Jen Lee, Guang-Li Luo, Fu-Ju Hou, Min-Cheng Chen, Chih-Chao Yang, Chang-Hong Shen, Wen-Fa Wu, Jia-Min Shieh, Wen-Kuan Yeh
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 5, Pp 286-293 (2016)
Two parts of work are included in this paper. In the first part, the novel Ge gate-all-around field effect transistors (GAA FETs) are introduced and discussed. Fabrication of Ge GAA FETs requires only simple top-down dry etching and blanket Ge epitax
Externí odkaz:
https://doaj.org/article/b40ad4702e004701beba3270cb4fa02d
Autor:
Tung-Ying Hsieh, Ping-Yi Hsieh, Chih-Chao Yang, Chang-Hong Shen, Jia-Min Shieh, Wen-Kuan Yeh, Meng-Chyi Wu
Publikováno v:
Micromachines, Vol 11, Iss 8, p 741 (2020)
We introduce a single-grain gate-all-around (GAA) Si nanowire (NW) FET using the location-controlled-grain technique and several innovative low-thermal budget processes, including green nanosecond laser crystallization, far-infrared laser annealing,
Externí odkaz:
https://doaj.org/article/22a985f4cf5044729dee059c539d9738