Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Chang-Ho Chen"'
Publikováno v:
International Journal of Photoenergy, Vol 2012 (2012)
We investigated the effects of different well shapes on the external quantum efficiency (EQE) and the efficiency droop in wide-well InGaN/GaN double-heterostructure light-emitting diodes. For forward current densities in the measurement range of grea
Externí odkaz:
https://doaj.org/article/4c215fdc07404229b2ecf76c76408a91
Autor:
Cha-Hsin Chao, Shih-Che Hung, Chang-Ho Chen, Ching-Fuh Lin, Shu-Chia Shiu, Ming-Tung Kuo, Ching-Hua Changjean
Publikováno v:
IEEE Photonics Technology Letters. 22:1847-1849
We report the influence of controlled lengths and densities of GaN rod arrays on the output power of GaN light-emitting diodes (LEDs). The morphology-controlled GaN rod arrays are fabricated via using ZnO rod arrays as a dry etching mask. Our investi
Publikováno v:
Journal of Applied Physics. 86:5376-5384
Expressions of the thermal equilibrium concentrations of Si in GaAs have been obtained in terms of fundamental constants of the involved materials. Silicon is an amphoteric dopant in GaAs, with four species: a neutral and an ionized shallow donor spe
Publikováno v:
International Journal of Photoenergy, Vol 2012 (2012)
We investigated the effects of different well shapes on the external quantum efficiency (EQE) and the efficiency droop in wide-well InGaN/GaN double-heterostructure light-emitting diodes. For forward current densities in the measurement range of grea
Autor:
Yueh-Hsien Lin, Kuan-Hsiung Liang, Chang-Ho Chen, I-Ling Huang, Rong-Show Kuo, Pei-Chun Chen, Shih-Wei Lai
Publikováno v:
APNOMS
Fast construction of Optical Distribution Network (ODN) and total fulfillment of network device management are crucial to the success of FTTH network. In this study, the conventional labor-intensive FTTH designing practice has been streamlined into a
Publikováno v:
Nanostructured Thin Films III.
This work reports on the controlled growth of well-aligned ZnO micro/nanorod arrays at low temperature on GaN substrates. The influence of GaN surface morphology and doping on the growth of ZnO rods via hydrothermal method is studied. The structural
Publikováno v:
CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.
Numerous researches have been focused on improving the light extraction efficiency of photons generated in the active layer of light emitting diodes (LEDs). Various methods have been proposed, such as LED dies [1], flip-chip LEDs [2], surface texturi
Publikováno v:
Applied Physics Letters. 63:718-720
Hydrogen profiles for proton‐exchanged layers in Z‐cut LiNbO3 were obtained by secondary ion mass spectrometry measurements after annealing at 400 °C for times from 6 to 180 min. To fit the measured hydrogen profiles, it was necessary to use two
Publikováno v:
Applied Physics Letters. 62:2769-2771
We have studied the behavior of the extraordinary refractive index in a set of annealed z‐cut proton‐exchanged lithium niobate (LiNbO3) substrates by means of optical prism‐coupling measurements and numerical simulations. Values of the index as
Publikováno v:
Chemistry Letters. 39:202-203
The influence of GaN seed morphology on the growth of ZnO rods by solution-based process is investigated. The orientation, defect density, and crystallinity of ZnO rods are systematically studied i...