Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Chang-Gyu Hwang"'
Autor:
Chang-Gyu Hwang
Publikováno v:
Proceedings of the IEEE. 9:1765-1771
As we enter the nanotechnology era, a big shift in paradigm comes to the memory industry. The traditional computer industry for dynamic RAM is expected to mature its memory-bit consumption with a relatively low growth rate. Meanwhile, the memory cons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07da588bb1d5c205194c297eb4c33318
https://doi.org/10.1109/jproc.2003.818323
https://doi.org/10.1109/jproc.2003.818323
Autor:
Chang-Gyu Hwang
Publikováno v:
IEEE Circuits and Devices Magazine. 17:12-18
In this article, the trends of the semiconductor memory market and the challenges of deep-submicron and nanometer silicon technology in the 21st century are introduced.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83d1e5cb1df54359fd725ae688eda464
https://doi.org/10.1109/101.933787
https://doi.org/10.1109/101.933787
Publikováno v:
IEEE Transactions on Electron Devices. 45:598-608
Many challenges emerge as the DRAM enters into a generation of the gigabit density era. Most of the challenges come from the shrink technology which scales down minimum feature size by a factor of 0.84 per year. The need for higher performance to nar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dfc640ed11bcdf50173490bc0097fa9
https://doi.org/10.1109/16.661221
https://doi.org/10.1109/16.661221
Publikováno v:
Microelectronics Journal. 27:777-783
The production of future generation DRAM devices critically requires R&D of process technologies for highly integrable and cost effective processes. Also, in order to support the ever-increasing requirements for high performance operation, the future
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5fcc9032070bb4115dcb50e377383d6
https://doi.org/10.1016/0026-2692(96)00004-3
https://doi.org/10.1016/0026-2692(96)00004-3
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 13:899-908
A two-dimensional device simulator SNU-2D based on the hydrodynamic model is developed for the simulation and analysis of submicron devices. The simulator has the capacity for both self-consistent steady-state and transient-state simulation. To obtai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9983002333fc3387b29dee527fa38286
https://doi.org/10.1109/43.293947
https://doi.org/10.1109/43.293947
Autor:
Chang-Gyu Hwang
Publikováno v:
2006 International Electron Devices Meeting.
The advances in silicon technology that have been the backbone of tremendous previous growth, was foreseen in 1965 when Gordon Moore published his famous prediction about the constant growth rate of chip complexity. And, in fact, it has repeatedly be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97c21a9c1e3ea9194d6eb73319be9cb1
https://doi.org/10.1109/iedm.2006.346835
https://doi.org/10.1109/iedm.2006.346835
Autor:
Chan Jong Park, Jung-Hwa Lee, Sei Seung Yoon, Hyung-Dong Kim, Dong Il Seo, Ejaz Haq, Byung-Chul Kim, Seung-Moon Yoo, Jeong Se-Jin, Chang Gyu Hwang, Tae-Seong Jang, Jin Man Han, Chang Sik Choi, Soo-In Cho
Publikováno v:
Proceedings of 1994 IEEE Symposium on VLSI Circuits.
A 256M DRAM featuring register controlled low power self refresh without toggling of internal addresses or predecoders, activation of all row lines in quick succession for rapid burn-in at wafer level and hierarchical I/O line scheme with flexible re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba86bc2d54e13242f05a53bff80c064b
https://doi.org/10.1109/vlsic.1994.586228
https://doi.org/10.1109/vlsic.1994.586228
Autor:
Chang-Gyu Hwang
Publikováno v:
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315).
Information technology (IT) emerged from the 1970s based on main-frame computers. Since then, PCs and the Internet world have drastically expanded the IT industry along with rapid growth of network and communication technology. For almost all platfor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c6a3f3b7dae0bf20a201b8ca81f5dc5
https://doi.org/10.1109/isscc.2002.992921
https://doi.org/10.1109/isscc.2002.992921
Autor:
Hongsik Jeong, Kinam Kim, Heung Soo Park, Yeong-kwan Kim, Chang Gyu Hwang, Won Suk Yang, Kyu Hyun Lee, Sang-In Lee, Soo Ho Shin, T.Y. Chung, Jong-Ho Lee, Moon Yong Lee, Wonseok Lee
Publikováno v:
1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).
A novel integration technology with capacitor over metal (COM) for 0.15 /spl mu/m stand-alone and embedded DRAMs is developed using a self-aligned dual damascene (SADD) process, which offers great breakthroughs. First, many back-end metallization iss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::484c59a0abeb9b3918eeb458c33b710f
https://doi.org/10.1109/vlsit.1999.799316
https://doi.org/10.1109/vlsit.1999.799316
Autor:
D. Chin, Chang Gyu Hwang, Huichul Shin, K. Kim, W.M. Park, Sangwoo Shim, C.S. Choi, J. H. Shin, Sutae Kim, Ohyun Kwon, Young-Kwan Park, Jung-Chak Ahn, S. W. Nam
Publikováno v:
1992 Symposium on VLSI Technology Digest of Technical Papers.
Micro villus patterning (MVP) technology which delivers the maximized cell capacitance is discussed. The key feature of the MVP technology is the formation of a hemispherical grain (HSG) archipelago and its transference to the underlayered oxide. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2720a455e2f019895a37331a36221440
https://doi.org/10.1109/vlsit.1992.200619
https://doi.org/10.1109/vlsit.1992.200619