Zobrazeno 1 - 10
of 83
pro vyhledávání: '"Chang-Chi Pan"'
Autor:
Chang-Chi Pan, 潘昌吉
96
This dissertation includes the growth and characterization of InGaN/(Al)GaN multiple-quantum-well ultraviolet light-emitting diode (UV LED) structures grown by metalorganic chemical vapor deposition. The main work can be divided into the foll
This dissertation includes the growth and characterization of InGaN/(Al)GaN multiple-quantum-well ultraviolet light-emitting diode (UV LED) structures grown by metalorganic chemical vapor deposition. The main work can be divided into the foll
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/6hdab3
Autor:
Chang-Chi Pan, 潘昌吉
89
The feasibility study of polycrystalline GaN films deposited on as-cut poly-Si substrates by metalorganic chemical vapor deposition (MOCVD) is the main work in this article. From the measured results in terms of surface morphology, crystallin
The feasibility study of polycrystalline GaN films deposited on as-cut poly-Si substrates by metalorganic chemical vapor deposition (MOCVD) is the main work in this article. From the measured results in terms of surface morphology, crystallin
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/47025715692646631088
Publikováno v:
Journal of Applied Physics; 7/1/2005, Vol. 98 Issue 1, p013712, 4p, 1 Black and White Photograph, 5 Graphs
Autor:
Jin-Wei Shi, Jen-Inn Chyi, Kung-Hsuan Lin, Chieh-Feng Chang, Shih Ze Sun, Chang Chi Pan, Chi-Kuang Sun, Chih Ming Lai
Publikováno v:
Nature Nanotechnology. 2:704-708
Coherent acoustic phonons are generated at terahertz frequencies when semiconductor quantum-well nanostructures are illuminated by femtosecond laser pulses. These phonons-also known as nanoacoustic waves-typically have wavelengths of tens of nanometr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3748bc04b023fffb8e9e661223b7c541
https://doi.org/10.1038/nnano.2007.319
https://doi.org/10.1038/nnano.2007.319
Publikováno v:
physica status solidi c. 4:2716-2719
Carrier transport of dichromatic InGaN-based LEDs with AlGaN spacer bandgap dependence has been studied. TREL measurements show that carrier dynamics could be well explained by the combined effects of carrier effective mass, carrier mobility, quantum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d3949f872185a5ea7f77f252ded3a9f
https://doi.org/10.1002/pssc.200674825
https://doi.org/10.1002/pssc.200674825
Autor:
Stephen J. Pearton, A. H. Onstine, Jihyun Kim, Chang Chi Pan, Yoshitaka Nakano, C. R. Abernathy, Tetsu Kachi, Fan Ren, Brent P. Gila, J.-I. Chyi, Y. Irokawa, Masayasu Ishiko, G.-T. Chen
Publikováno v:
physica status solidi (c). 2:2668-2671
The initial demonstration of an enhancement mode MgO/p-GaN metal-oxide semiconductor field effect transistor (MOSFET) utilizing Si+ ion implanted regions under the source and drain to provide a source of minority carriers for inversion was reported.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0a07272d8a8998d3ea4d045be855286
https://doi.org/10.1002/pssc.200461280
https://doi.org/10.1002/pssc.200461280
Autor:
B. S. Kang, Mark Sheplak, Brent P. Gila, G.-T. Chen, Fan Ren, J.-I. Chyi, S. Kim, J. Kim, R. Mehandru, C. R. Abernathy, Chang Chi Pan, K.H. Baik, Stephen J. Pearton, Toshikazu Nishida, V. Chandrasekaran, S. N. G. Chu
Publikováno v:
physica status solidi (c). 2:2684-2687
Nitride High Electron Mobility Transistor(HEMT) structures are excellent candidates for polar liquid detectors, pressure sensors and piezoelectric-related applications. The changes in conductance of the channel of AlGaN/GaN high electron mobility tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5161e0fd1e516bd37fa7e3690c2a2e32
https://doi.org/10.1002/pssc.200461269
https://doi.org/10.1002/pssc.200461269
Autor:
Brent P. Gila, Jihyun Kim, K.H. Baik, Stephen J. Pearton, C. R. Abernathy, Chang Chi Pan, Fan Ren, G.-T. Chen, Y. Irokawa, Jen-Inn Chyi, Soon-oh Park
Publikováno v:
Solid-State Electronics. 48:827-830
The fabrication of GaN merged p–i–n/Schottky (MPS) diodes using Si+ ion implantation into p-epi layers on bulk, free-standing GaN substrates is reported. Diode diameters from 50 to 500 μm were investigated. These initial MPS diodes show larger t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af02fd973d296b30e1687b0acf1b527a
https://doi.org/10.1016/j.sse.2003.09.018
https://doi.org/10.1016/j.sse.2003.09.018
Autor:
Brent P. Gila, J.-I. Chyi, C. R. Abernathy, Chang Chi Pan, Y. Irokawa, K.H. Baik, G.-T. Chen, Fan Ren, Stephen J. Pearton, Jihyun Kim
Publikováno v:
Journal of Electronic Materials. 33:426-430
Type conversion of p-GaN by direct Si+ ion implantation and subsequent annealing was demonstrated by the fabrication of lateral Schottky diodes. The Si+ activation percentage was measured as a function of annealing time (30–300 sec) and temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf9aa3b7178a38060c50b8efc5723ad3
https://doi.org/10.1007/s11664-004-0196-5
https://doi.org/10.1007/s11664-004-0196-5
Autor:
Jihyun Kim, Fan Ren, N. B. Smirnov, Alexander Y. Polyakov, Weimin Chen, Brent P. Gila, Chang Chi Pan, Irina Buyanova, G. Y. Rudko, G.-T. Chen, R. M. Frazier, C. R. Abernathy, John Zavada, A. V. Govorkov, J.-I. Chyi, G. T. Thaler, Steve Pearton
Publikováno v:
Journal of Electronic Materials. 33:241-247
Electrical and electroluminescent properties were studied for GaN/InGaN light-emitting diodes (LEDs) with the n-GaN layer up and with the top portion of the n layer made of undoped GaMnN to allow polarization modulation by applying an external magnet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7203148d5a112a762475891d29bc7554
https://doi.org/10.1007/s11664-004-0186-7
https://doi.org/10.1007/s11664-004-0186-7