Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Chang-Cheng Chuo"'
Autor:
Zhe Cheng, Lifang Jia, Chang-Cheng Chuo, Yun Zhang, Kun Yang, Lian Zhang, Yujie Ai, Ruxue Ni, Zhe Liu
Publikováno v:
Journal of Alloys and Compounds. 794:8-12
We demonstrate 297.5-nm AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) grown on a high-temperature annealed (HTA) sputtered AlN template upon sapphire substrate. After HTA at 1600 °C, full width at half maximum values of (0002) and (10 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3e7b727bc21fdec595027ef10c8242a
https://doi.org/10.1016/j.jallcom.2019.04.256
https://doi.org/10.1016/j.jallcom.2019.04.256
High-performance AlGaN deep ultraviolet LEDs with sputtered-AlN technology (Conference Presentation)
Autor:
Chang-Cheng Chuo, Hsu Chen-Ke
Publikováno v:
Light-Emitting Devices, Materials, and Applications.
AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) have attracted much attention due to the potential applications in water purification, sterilization, and phototherapy etc[1]. However, the emission efficiency is still much lower than GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f028d20ba89f32d60cd6d70355efbcb3
https://doi.org/10.1117/12.2514626
https://doi.org/10.1117/12.2514626
Autor:
Joe-Air Jiang, Cheng-Wei Hung, Jen-Cheng Wang, Chang-Cheng Chuo, Ya-Fen Wu, Zheng-Hong Lee, Ping-Lin Fan, Chih-Chun Ke, Hui-Tang Shen, Tzer-En Nee
Publikováno v:
Journal of Crystal Growth. 311:3544-3548
The anomalous Berthelot-type optical properties of quaternary AlInGaN heterostructure with different quantum well pairs have been investigated systematically in this study. A microscopic model based on the luminescence observations of a comparison be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22b4144cd0c971bd3cc81ec895da0165
https://doi.org/10.1016/j.jcrysgro.2009.04.029
https://doi.org/10.1016/j.jcrysgro.2009.04.029
Autor:
Chih-Chun Ke, Tzer-En Nee, Zheng-Hong Lee, Chang-Cheng Chuo, Cheng-Wei Hung, Hui-Tang Shen, Jen-Cheng Wang, Ya-Fen Wu
Publikováno v:
Japanese Journal of Applied Physics. 46:2558-2562
The carrier-transport characteristics of quaternary AlInGaN heterosystems are studied in-depth using photoluminescence measurements. Based on Singh's model, a higher degree of disorder in quaternary AlInGaN heterostructures is observed to manifest no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7765cb3df92c739b45720506b237b49
https://doi.org/10.1143/jjap.46.2558
https://doi.org/10.1143/jjap.46.2558
Autor:
Hung-Ling Tsai, Makoto Shiojiri, Ting-Yu Wang, Chang-Cheng Chuo, Jung-Tsung Hsu, Zhe Chuan Feng, Jer-Ren Yang
Publikováno v:
MATERIALS TRANSACTIONS. 48:894-898
Multiple In0.18Ga0.82N (4 nm)/GaN (40 nm) quantum well (QW) layers in a green laser diode were observed by high-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) and conventional transmission electron microscopy. HAADF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dbe3adcdc868c8ccc0b222ddb25df3e
https://doi.org/10.2320/matertrans.48.894
https://doi.org/10.2320/matertrans.48.894
Autor:
Tsin Dong Lee, Hao-Chung Kuo, Jim Y. Chi, Te Chung Wang, Min Ying Tsai, Tien-Chang Lu, Zheng Hong Lee, Ching En Tsai, Chang Cheng Chuo
Publikováno v:
Journal of Crystal Growth. 287:582-585
We report high output power from AlInGaN multiple quantum well (MQW) ultraviolet light-emitting diodes. The high Al containing cladding layer, electron blocking layer and p-contact layer were chosen for transparency at 365 nm to reduce the internal a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d074dacdef8ea73a46b7577760a81ff6
https://doi.org/10.1016/j.jcrysgro.2005.10.141
https://doi.org/10.1016/j.jcrysgro.2005.10.141
Autor:
Gou-Chung Chi, Chang Cheng Chuo, Chin An Chang, Jen-Inn Chyi, Chii Chang Chen, Kun Long Hsieh
Publikováno v:
Solid-State Electronics. 46:1123-1126
The optical pumping spectra of InGaN/GaN single quantum well structures with high indium content after thermal annealing were analyzed at room temperature. Redshift of the peak position in the optical pumping spectra was observed after the samples we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b036f9004e8880e6a932e08ffba1fc5f
https://doi.org/10.1016/s0038-1101(02)00053-9
https://doi.org/10.1016/s0038-1101(02)00053-9
Autor:
Jen-Inn Chyi, Kun Long Hsieh, Chang Cheng Chuo, Chin An Chang, Chii Chang Chen, Gou-Chung Chi
Publikováno v:
Journal of Applied Physics. 89:5465-5468
Photoluminescence measurement in surface-emitting geometry, optical pumping in edge-emitting geometry and spatially resolved spectra measurement were performed to study high-indium-content InxGa1−xN/GaN single quantum well (SQW) structures (x⩾32%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3835e39e7cc4c2ddd0d64e378f286fd1
https://doi.org/10.1063/1.1363678
https://doi.org/10.1063/1.1363678
Publikováno v:
Solid-State Electronics. 44:1483-1486
The GaN homo-junction light-emitting diodes (LEDs) with multiple-pair buffer layer (MBL) were grown by metalorganic vapor phase epitaxy on sapphire substrates. Each pair of the buffer layer consists of a 300 A thick GaN nucleation layer grown at a lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00f835f09172a8693399e961e99a993a
https://doi.org/10.1016/s0038-1101(00)00052-6
https://doi.org/10.1016/s0038-1101(00)00052-6