Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Chang han Rho"'
Publikováno v:
2021 18th International SoC Design Conference (ISOCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7e1ab3d094469d34a36eb2289b06ef8
https://doi.org/10.1109/isocc53507.2021.9613975
https://doi.org/10.1109/isocc53507.2021.9613975
Autor:
Heber Hernandez-Arriaga, Jaidah Mohan, Yong Chan Jung, Jin-Hyun Kim, Chang-Han Rho, Rino Choi, Jiyoung Kim
Publikováno v:
ECS Meeting Abstracts. :1074-1074
Integrating the HfZrO2 (HZO) on silicon have attracted the attention of researches in the development of ferroelectric field effect transistor (FeFETs) for implementation in high-density memories and neuromorphic devices[1][2]. In this work, it has b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c2cf407e9e4da3412cc6639dc9d87ed
https://doi.org/10.1149/ma2022-01191074mtgabs
https://doi.org/10.1149/ma2022-01191074mtgabs