Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Chang Young Koo"'
Publikováno v:
Ceramics International. 47:6371-6375
Magnetoelectric (ME) property modulation in heterostructured (Ni0.5Zn0.5)Fe2O4/Pt/Pb(Zr0.3Ti0.7)O3 (NZFO/Pt/PZT) thin films on platinized Si substrate by thermal annealing condition variation was studied. In an attempt to prevent interfacial reaction
Autor:
Chang Young Koo, Jeong-Joo Kim, Maryane Putri, Hee Young Lee, Youngu Lee, Youngjun Jeong, Jung-A Lee, Imas Noviyana, Hye Ji Lee
Publikováno v:
Journal of Nanoscience and Nanotechnology. 18:1270-1273
IZTO20 (In0.6Zn0.2Sn0.2O1.5) ceramic target was prepared from oxide mixture of In2O3, ZnO, and SnO2 powders. IZTO20 thin films were then deposited onto glass substrate at 400 °C by DC magnetron sputtering. The average optical transmittance determine
Autor:
Chang Young Koo, Youngjun Jeong, Jeong-Joo Kim, Annisa Dwi Lestari, Hee Young Lee, Jung-A Lee, Hye Ji Lee, Youngu Lee, Imas Noviyana
Publikováno v:
Journal of Nanoscience and Nanotechnology. 17:4822-4826
Non-stoichiometric indium zinc tin oxide (IZTO) thin films were deposited onto glass substrates at 400 °C by DC magnetron sputtering using non-stoichiometric (In0.5Zn0.25−xSn0.25+xO1.5 and In0.4Zn0.3−xSn0.3+xO1.5, where x = ±0.05) IZTO ceramic
Autor:
Ki Hwan Kim, Chang Young Koo, Hee Young Lee, Jung-A Lee, Jeong-Joo Kim, Maryane Putri, IainD. Baikie, AngelaC. Grain
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 12:611-616
Autor:
Ki Hwan Kim, Maryane Putri, Hye Ji Lee, Chang Young Koo, Jung-A Lee, Jeong-Joo Kim, Hee Young Lee
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 10:541-545
Autor:
Chang Young Koo, Jung Min Park, Jungho Ryu, Sung-Ok Hwang, Hee Young Lee, Jai-Yeoul Lee, You Jeong Eum
Publikováno v:
Journal of the Korean Physical Society. 65:342-345
CoFe2O4(CoFO)/Pt/Pb(Zr0.52Ti0.48)O3 (PZT) multilayer films were grown on Pt/Ti/SiO2/Si substrates. A thin Pt layer was inserted between the ferrimagnetic and the ferroelectric layers in order to suppress diffusion at high temperatures and thereby to
Publikováno v:
Journal of the Korean Physical Society. 65:229-233
Magnetic/ferroelectric multilayer thin films using PbZr0.52Ti0.48O3 (PZT) and two different magnetic materials, i.e., Terfenol-D and CuFe2O4 (CuFO) layers, were fabricated, and their magnetoelectric (ME) coupling behavior was investigated. The PZT la
Autor:
Jungho Ryu, Sung-Ok Hwang, Hee Young Lee, You Jeong Eum, Jong-Woo Kim, Jai-Yeoul Lee, Chang Young Koo
Publikováno v:
Integrated Ferroelectrics. 157:57-62
Magnetoelectric (ME) effect in multiferroic or ferroelectric/ferromagnetic composite thin films occurs through the elastic coupling between the piezoelectric properties of ferroelectric and magnetostrictive properties of ferromagnetic component. To o
Publikováno v:
Ferroelectrics. 465:89-95
Chemical solution-derived anti-ferroelectric (AFE) thin films for energy storage devices were investigated. In order to evaluate dielectric properties(dielectric constant and loss, leakage current density), anti-ferroelectric properties(energy storag
Publikováno v:
Ferroelectrics. 465:76-82
CoFe2O4/Pt/Pb(Zr0.3Ti0.7)O3 thin films were grown on Pt/Ti/SiO2/Si substrate in order to investigate the magnetoelectric properties of ferromagnetic/ferroelectric multilayer thin films. Thin Pt layer was introduced to prevent inter-diffusion between