Zobrazeno 1 - 10 of 41 pro vyhledávání: '"Chang Oh Jeong"'
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Direct contact of indium tin oxide layer to Al(Ni) alloy electrodes for a-Si:H thin film transistors: Effects of Ni alloying on interfacial oxide growth and contact resistance
Autor: Yang-Ho Bae, Chang-Oh Jeong, Jaegab Lee, Ho-Seok Nam, Dooman Han, K. B. Lee, Kyunghoon Jeong
Publikováno v: Thin Solid Films. 546:9-13
Sputtering of indium tin oxide (ITO) on pure Al substrate produces an Al 2 O 3 layer at the interface, leading to Schottky contact characteristics. A very small amount of Ni (2 at.% Ni) added to Al drastically reduces the contact resistance of an ITO
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::134e4656b78ac3c8c728792ec35f091f
https://doi.org/10.1016/j.tsf.2013.05.035
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8.4L:Late-News Paper: Electrical Properties of a-IGZO Films Depending on Trap States
Autor: Byung Seong Bae, Ju-Yeon Kim, Eui-Jung Yun, Chang-Oh Jeong, Sang Won Shin
Publikováno v: SID Symposium Digest of Technical Papers. 45:87-89
We investigated the photo-response of a-IGZO thin films under light illumination. The photo-response was compared before and after annealing. As the annealing temperatures increase, photo-response changes quite substantially. We explored the photo-re
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::70981d165a0464795991899752fc127a
https://doi.org/10.1002/j.2168-0159.2014.tb00024.x
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Half-Buried Structure Cu Bus Line in TFT LCD
Autor: Jae-Hong Kim, Jean Ho Song, Chang Oh Jeong, Shi Yul Kim, Sung Hen Cho, Honglong Ning, Dong Ju Yang, Ki Yong Song
Publikováno v: Key Engineering Materials. :329-334
As we know, we normally used stacked aluminum bus line as the Gate or Source/Drain layer in LCD now, but the next general LCD needs larger display area, higher resolution, and faster response time, so we need develop the new TFT bus line structure an
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a1f307197148d23ad88926006cb9025f
https://doi.org/10.4028/www.scientific.net/kem.428-429.329
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Development of a new hybrid silicon thin‐film transistor fabrication process
Autor: Sung Haeng Cho, Hyungjun Kim, Shi Yul Kim, Yong Mo Choi, Yu Gwang Jeong, Chang-Oh Jeong
Publikováno v: Journal of Information Display. 10:33-36
A new hybrid silicon thin‐film transistor (TFT) fabrication process using the DPSS laser crystallization technique was developed in this study to realize low‐temperature poly‐Si (LTPS) and a‐Si:H TFTs on the same substrate as a backplane of t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ed06b5f9a94ce56b303912c4c319eb88
https://doi.org/10.1080/15980316.2009.9652077
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High Performance Thin Film Transistor with ZnO Channel Layer Deposited by DC Magnetron Sputtering
Autor: Chang-Oh Jeong, Jong-Wan Park, Yeon-Keon Moon, Dae-Yong Moon, Sang-Ho Lee
Publikováno v: Journal of Nanoscience and Nanotechnology. 8:4557-4560
Research in large area electronics,1 especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconducto
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21d855aa8df136c7a819bd1acec1c354
https://doi.org/10.1166/jnn.2008.ic24
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