Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Chang Moon Lim"'
Autor:
Chan-Ha Park, Jeroen Van de Kerkhove, Nouredine Rassoul, Anne-Laure Charley, Pieter Vanelderen, Frederic Lazzarino, Lieve Van Look, Amir-Hossein Tamaddon, Romuald Blanc, Frieda Van Roey, Geert Vandenberghe, Danilo De Simone, Kurt G. Ronse, Chang-Moon Lim, Junghyung Lee, Sarohan Park, Kilyoung Lee, Nadia Vandenbroeck, Roberto Fallica, Gian Lorusso
Publikováno v:
Extreme Ultraviolet (EUV) Lithography X.
Extreme ultraviolet (EUV) materials are deemed as critical to enable and extend the EUV lithography technology. Currently both chemically amplified resist (CAR) and metal-oxide resist (MOR) platforms are candidates to print tight features on wafer, h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbc1b20f28b8697fcc5bc1e231e9123f
https://doi.org/10.1117/12.2515170
https://doi.org/10.1117/12.2515170
Autor:
Ruochong Fei, Dorothe Oorschot, Jin-Woo Lee, Marleen Kooiman, Hwan Kim, shu-yu lai, Jaehee Hwang, Kang-San Lee, Chang-Moon Lim, Marc Kea, Inhwan Lee, Willem van Mierlo, Ziyang Wang, Harm Dillen, Jung-Hyun Kang
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII.
Introduction and problem statement Given that EUV lithography allows printing smaller Critical Dimension (CD) features, it can result in non-normal distributed CD populations on ADI wafers [Civay SPIE AL 2014], leading to errors in predicted failure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19d3a399ac5c899e902f3cee1cbf36e9
https://doi.org/10.1117/12.2515487
https://doi.org/10.1117/12.2515487
Autor:
John McNamara, Chang-Moon Lim, Ziyang Wang, Jung-Hyun Kang, Jo Finders, Inhwan Lee, Yoonsuk Hyun, Hwan Kim, Gijsbert Rispens, Chang-Nam Ahn, Par Broman
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX.
Illumination source optimization is a very fundamental task in wafer lithography. By optimizing the incidence angles at the reticle, the combined diffraction behavior of mask and projection optics can be modified. One of the most critical parameter t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff35300228bdd4ca9e31d6c9d1642175
https://doi.org/10.1117/12.2299598
https://doi.org/10.1117/12.2299598
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX.
LCDU (Local Critical Dimension Uniformity) is one of the biggest challenges in EUV lithography as well as throughput. High contrast illumination, so called, leaf hexapole illumination is proposed for staggered contact-hole array pattern. Leaf hexapol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52b8cfb540148a6b2df2b144ece2a690
https://doi.org/10.1117/12.2299322
https://doi.org/10.1117/12.2299322
Autor:
Jinwoo Choi, Sunyoung Koo, Inhwan Lee, Mijung Lim, Chang-Moon Lim, Sarohan Park, Yoonsuk Hyun
Publikováno v:
SPIE Proceedings.
As we presented in the last conference, it is much difficult to get down the k1 limit of EUV lithography compared to that of optical lithography especially recent immersion lithography. Even though current 0.33NA NXE3300 tool has enhanced aberration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6047053112493a6271382630ffb6c74b
https://doi.org/10.1117/12.2258144
https://doi.org/10.1117/12.2258144
Autor:
De Simone, Danilo, Blanc, Romuald, Van de Kerkhove, Jeroen, Tamaddon, Amir-Hossein, Fallica, Roberto, Van Look, Lieve, Rassoul, Nouredine, Lazzarino, Frederic, Vandenbroeck, Nadia, Vanelderen, Pieter, Lorusso, Gian, Van Roey, Frieda, Charley, Anne-Laure, Vandenberghe, Geert, Ronse, Kurt, Kilyoung Lee, Junghyung Lee, Sarohan Park, Chang-Moon Lim, Chan-Ha Park
Publikováno v:
Proceedings of SPIE; 1/20/2019, Vol. 10957, p109570T-1-109570T-10, 10p
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
Sub 0.3k1 regime has been widely adopted for high volume manufacturing (HVM) of optical lithography due to various resolution enhancement technologies (RETs). It is not certain when such low k1 is feasible in EUV, though most technologies are availab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7c23550bdcdfbcff6aef820d75d2eb6
https://doi.org/10.1117/12.2219546
https://doi.org/10.1117/12.2219546
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
The improvement of overlay control in extreme ultra-violet (EUV) lithography is one of critical issues for successful mass production by using it. Especially it is important to improve the mix and match overlay or matched machine overlay (MMO) betwee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e705900e57aa4c542b1f18c81740f7ac
https://doi.org/10.1117/12.2219169
https://doi.org/10.1117/12.2219169
Autor:
Seung-Uk Jeong, Junghyung Lee, Mijung Lim, Sunyoung Koo, Ji Eun Kim, Young-Sik Kim, Chang-Moon Lim
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
Extreme Ultraviolet (EUV) is the most promising technology as substitute for multiple patterning based on ArF immersion lithography. If enough productivity can be accomplished, EUV will take main role in the chip manufacturing. Since the introduction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b2877eb834907bb69f60261ea6928f0
https://doi.org/10.1117/12.2219558
https://doi.org/10.1117/12.2219558
Autor:
Noh-Jung Kwak, Jin-Soo Kim, Young-Sik Kim, Chang-Moon Lim, Sunyoung Koo, Yoonsuk Hyun, Seo-Min Kim, Kyu-Young Kim
Publikováno v:
SPIE Proceedings.
As EUV reaches high volume manufacturing, scanner source power and reticle defectivity attract a lot of attention. Keeping a EUV mask clean after mask production is as essential as producing a clean EUV mask. Even though EUV pellicle is actively inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cda88cf452bed5643281f14dfa119bee
https://doi.org/10.1117/12.2085626
https://doi.org/10.1117/12.2085626