Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Chang Mo Yoon"'
Autor:
Seung Gi Seo, Chang Mo Yoon, Hyun-Ho Lee, Heonjong Jeong, Jong Hyun Ahn, Taejin Choi, Venkateswara R. Chitturi, Taewook Nam, Hima Kumar Lingam, Yunjung Choi, Hyungjun Kim, Andrey Korolev
Publikováno v:
Applied Surface Science. 485:381-390
In the present study, SiO2 was deposited using the atomic layer deposition (ALD) with a 1,2-bis(diisopropylamino)disilane (BDIPADS) precursor. The use of this precursor exhibited a higher growth rate and lower initial growth temperature than the use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79d59fddb62a388fecb48b3cb57fdf7b
https://doi.org/10.1016/j.apsusc.2019.03.227
https://doi.org/10.1016/j.apsusc.2019.03.227
Autor:
Ohyung Kwon, Il Kwon Oh, Se-Hun Kwon, Woo-Jae Lee, Sanghun Lee, Woo-Hee Kim, Hyungjun Kim, Hanearl Jung, Bo Eun Park, Chang Mo Yoon
Publikováno v:
ACS Applied Materials & Interfaces. 10:40286-40293
A method for significantly increasing the growth rates (GRs) of high- k oxide thin films grown via plasma-enhanced atomic layer deposition (PE-ALD) by enhancing the plasma density through the addition of Ar gas to the O2 plasma oxidant was developed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13502d0f88d7a05f26559ce2d6087dca
https://doi.org/10.1021/acsami.8b14244
https://doi.org/10.1021/acsami.8b14244
Autor:
Hyoung Seok Moon, Bonggeun Shong, Yujin Lee, Han-Bo-Ram Lee, Chang Mo Yoon, Jae Min Myoung, Hyun Gu Kim, Il Kwon Oh, Su Jeong Lee, Hyungjun Kim, Jeong Gyu Song
Publikováno v:
Chemistry of Materials. 30:830-840
We have investigated the atomic layer deposition (ALD) of GeO2 thin films that dissolve in water rapidly and have excellent electrical properties for use in memory devices. The growth characteristics based on surface reactions during the ALD process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cc104a0bed5bf4b3fe698d634c42db3
https://doi.org/10.1021/acs.chemmater.7b04371
https://doi.org/10.1021/acs.chemmater.7b04371
Autor:
Han-Bo-Ram Lee, Seung Gi Seo, Il Kwon Oh, Byung Chul Yeo, Chang Mo Yoon, Joon Young Yang, Su Jeong Lee, Woo-Hee Kim, Jae Min Myoung, Yong Baek Lee, Choong-Keun Yoo, Hyungjun Kim, Jonggeun Yoon, Kim Ho-Jin, Sang Soo Han
Publikováno v:
ACS Applied Materials & Interfaces. 9:41607-41617
The reaction mechanism of area-selective atomic layer deposition (AS-ALD) of Al2O3 thin films using self-assembled monolayers (SAMs) was systematically investigated by theoretical and experimental studies. Trimethylaluminum (TMA) and H2O were used as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02f3a81b04a0409493a4faffad53294c
https://doi.org/10.1021/acsami.7b13365
https://doi.org/10.1021/acsami.7b13365
Autor:
Yujin Seo, Chang Mo Yoon, Tae In Lee, Byung Jin Cho, Wan Sik Hwang, Hyun Yong Yu, Hyungjun Kim, Bo-Eun Park
Publikováno v:
IEEE Transactions on Electron Devices. 64:3303-3307
This paper investigates the impact of an atomic layer-deposited Y2O3 dielectric on the passivation of a GeO2 layer in GeO2-based Ge gate stacks. The equivalent oxide thickness scalability and thermal stability of the ultrathin Y2O3 layer are evaluate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40fe46821494429af631066129681c04
https://doi.org/10.1109/ted.2017.2710182
https://doi.org/10.1109/ted.2017.2710182
Autor:
Han-Bo-Ram Lee, Chang Mo Yoon, Tae Hyung Kim, Zonghoon Lee, Il Kwon Oh, Hanearl Jung, Kangsik Kim, Geun Young Yeom, Hyungjun Kim, Gilsang Yoo, Chang Wan Lee
Publikováno v:
Applied Surface Science. 387:109-117
Although plasma-enhanced atomic layer deposition (PE-ALD) results in several benefits in the formation of high-k dielectrics, including a low processing temperature and improved film properties compared to conventional thermal ALD, energetic radicals
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63d884a74e12bb9542b1a09d21bd942c
https://doi.org/10.1016/j.apsusc.2016.06.048
https://doi.org/10.1016/j.apsusc.2016.06.048
Film Properties of Al Thin Films Depending on Process Parameters and Film Thickness Grown by Sputter
Publikováno v:
Korean Journal of Materials Research. 26:438-443
We developed an Al sputtering process by varying the plasma power, process temperature, and film thickness. We observed an increase of hillock distribution and average diameter with increasing plasma power, process temperature, and film thickness. Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ff852dcda072f03094cb74ad8f83196
https://doi.org/10.3740/mrsk.2016.26.8.438
https://doi.org/10.3740/mrsk.2016.26.8.438
Autor:
Hanearl, Jung, Il-Kwon, Oh, Chang Mo, Yoon, Bo-Eun, Park, Sanghun, Lee, Ohyung, Kwon, Woo Jae, Lee, Se-Hun, Kwon, Woo-Hee, Kim, Hyungjun, Kim
Publikováno v:
ACS applied materialsinterfaces. 10(46)
A method for significantly increasing the growth rates (GRs) of high- k oxide thin films grown via plasma-enhanced atomic layer deposition (PE-ALD) by enhancing the plasma density through the addition of Ar gas to the O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::656b942a7aa10f4f6bbd2c01ca14b662
https://pubmed.ncbi.nlm.nih.gov/30358984
https://pubmed.ncbi.nlm.nih.gov/30358984
Autor:
Jungmok Seo, Mi Hyang Sheen, Hassan Algadi, Taeyoon Lee, Il Kwon Oh, Chang Mo Yoon, Hyungjun Kim, Chandreswar Mahata, Chang Wan Lee, Young Woon Kim
Publikováno v:
Journal of Materials Chemistry C. 3:10293-10301
Metal–oxide-semiconductor (MOS) capacitors with an amorphous Ta1−xZrxO composite gate dielectric film and a SiO2 passivation layer were fabricated on an indium phosphide (InP) substrate. To investigate the impact of the passivation layer, the int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20a930ecb648d2fd813cf3ddc1d78767
https://doi.org/10.1039/c5tc01890k
https://doi.org/10.1039/c5tc01890k
Autor:
Seunggi, Seo, Byung Chul, Yeo, Sang Soo, Han, Chang Mo, Yoon, Joon Young, Yang, Jonggeun, Yoon, Choongkeun, Yoo, Ho-Jin, Kim, Yong-Baek, Lee, Su Jeong, Lee, Jae-Min, Myoung, Han-Bo-Ram, Lee, Woo-Hee, Kim, Il-Kwon, Oh, Hyungjun, Kim
Publikováno v:
ACS applied materialsinterfaces. 9(47)
The reaction mechanism of area-selective atomic layer deposition (AS-ALD) of Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::213a653af35517c5daa00a0d13311dcd
https://pubmed.ncbi.nlm.nih.gov/29111636
https://pubmed.ncbi.nlm.nih.gov/29111636