Zobrazeno 1 - 10
of 82
pro vyhledávání: '"Chang Jin Kang"'
Publikováno v:
Korean Journal of Anesthesiology, Vol 58, Iss 1, Pp 45-49 (2010)
BackgroundThe present study tested the effect of midazolam administration after sevoflurane anesthesia against emergence agitation in children in the recovery phase.MethodsA total of 60 children presenting for ophthalmic surgery under sevoflurane ane
Externí odkaz:
https://doaj.org/article/9078bf71a0db4b31b079459fae3aec84
Publikováno v:
Microelectronic Engineering. 104:33-36
An attenuated phase shift mask (PSM) (half-tone PSM) is an effective and common technique for resolution enhancement and for forming specific patterns. When an ArF-attenuated PSM with hole- or space-type patterns is used under a KrF light source scan
Autor:
Dong-Kwon Kim, Chang-Jin Kang, Kyoung-sub Shin, Jeong-Yun Lee, Dong-Hwan Kim, Si-Young Choi, Myeong-cheol Kim
Publikováno v:
Thin Solid Films. 519:6645-6648
The UV-induced damages to the gate oxide in a commercially available high-density-plasma dielectric oxide deposition system for the ultra-large integrated circuit fabrication process were analyzed systematically using the metal-oxide-semiconductor ca
Publikováno v:
ECS Transactions. 33:143-147
Three-dimensional stacked memory has attracted much attention due to its advantages such as high-speed operation, low-power consumption, and high-level integration. Many researchers have reported various novel approaches to achieve three dimensional
Autor:
Kwang Ryul Kim, Joo Tae Moon, Chang Jin Kang, Kong Soo Lee, Hongsik Jeong, Hyunho Park, Jae Jong Han, Hanwook Jeong, Young Sub Yoo, Byoungdeog Choi, Daehan Yoo, Seok Sik Kim
Publikováno v:
ECS Transactions. 28:281-286
Vertical diodes for cross-point phase change memory were realized by selective epitaxial growth (SEG) technique using cyclic chemical vapor deposition method. H2/SiH4/Cl2 cyclic CVD system was introduced in batch-type vertical furnace equipement, rep
Publikováno v:
Korean Journal of Anesthesiology, Vol 58, Iss 1, Pp 45-49 (2010)
Korean Journal of Anesthesiology
Korean Journal of Anesthesiology
Background The present study tested the effect of midazolam administration after sevoflurane anesthesia against emergence agitation in children in the recovery phase. Methods A total of 60 children presenting for ophthalmic surgery under sevoflurane
Autor:
Sang-Wook Kim, Sung-Soo Suh, Yong-Jin Chun, Young-Chang Kim, Suk-Joo Lee, Jung-Hyeon Lee, Sung-Woon Choi, Chang-Jin Kang, Woo-Sung Han, Joo-Tae Moon
Publikováno v:
Japanese Journal of Applied Physics. 47:4893-4897
In this paper, key process factors are computed during OPC for each fragment segments to perform a full-chip analysis of hot spot and removal of hot spot via process factor cost driven auto-correction or provide design guide for design for patterning
Autor:
Beom Hoan O, Chang-Jin Kang, Chin-Wook Chung, Dae-Kyu Choi, Joung Ho Lee, Suk-Ho Joo, Se-Geun Park, Jong Woo Lee, Junghoon Joo, Sung Kyeong Kim, Seung Gol Lee, Park Soon, Wan Jae Park, Duck Jin Chung, Chung-Gon Yoo, Joohee Kim, Sang-Deog Cho, Hyoun Woo Kim, Woon Suk Hwang, Jeong-Yeol Jang, Keeho Kim, Young-Chang Joo, Sung Pil Chang
Publikováno v:
Microelectronic Engineering. 85:300-303
We have investigated the characteristics of Ar/O"2 plasmas in terms of the photoresist (PR) and low-k material etching using a ferrite-core inductively coupled plasma (ICP) etcher. We found that the O"2/(O"2+Ar) gas flow ratio significantly affected
Autor:
Gyeong-Jin Min, Joo Tae Moon, Chul Shin, Han-Ku Cho, Ken Tokashiki, Jeon Yun-Kwang, Chang Jin Kang, Jin-Seok Lee, Do-young Kam, Yvette Lee, Do-Haing Lee, Sung-Wook Hwang
Publikováno v:
Surface and Coatings Technology. 201:8601-8605
Neutralization process efficiency in a low-angle forward-reflected neutral beam source has been observed. Its charging properties have also been compared against those of a conventional plasma processing tool. Neutralization efficiency, defined as th
Autor:
Joo-Tae Moon, Yong-jin Kim, Kye Hyun Baek, Gyung-jin Min, KH Bai, Chang-Jin Kang, Han-Ku Cho, Ken Tokashiki
Publikováno v:
Thin Solid Films. 515:4864-4868
Plasma process-induced “white pixel defect” (WPD) of CMOS active pixel sensor (APS) is studied for Si3N4 spacer etch back process by using a magnetically enhanced reactive ion etching (MERIE) system. WPD preferably takes place at the wafer edge r