Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Chang J. Chen"'
Autor:
Li W. Zhou, Jian Y. Wang, Jin S. Zhao, Qing M. Zong, Chang J. Chen, Lian Rong Lv, Xing L. Shao, Hao Jiang, Ran Chen
Publikováno v:
ECS Solid State Letters. 4:P8-P11
Resistance random access memory (RRAM) in various oxide materials,especiallybinaryoxidematerialssuchasTiO2, 1 ZrO2, 2 HfO2, 3 and ZnO, 4 has attracted considerable attention as one of the promising applications in next-generation nonvolatile semicond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0d914ea7fe8c2d3ec4ebcb165112e8b
https://doi.org/10.1149/2.0021501ssl
https://doi.org/10.1149/2.0021501ssl
Autor:
Jian Y. Wang, Chang J. Chen, Kai Liu, Ran Chen, Jin S. Zhao, Xing L. Shao, Cheol Seong Hwang, Kai L. Zhang, Li W. Zhou, Kyung Jean Yoon, Kuo Sun, Chen M. Ma
Publikováno v:
ACS Applied Materials & Interfaces. 5:11265-11270
Two-step reset behaviors in the resistance switching properties of the top Al/TiOx/bottom Cu structure were studied. During the electroforming and set steps, two types of conducting filaments composed of Cu and oxygen vacancies (Cu-CF and V(O)-CF) we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5abc300a615c9d5296de6f8d6f08b225
https://doi.org/10.1021/am403498q
https://doi.org/10.1021/am403498q