Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Chang Hyoung Yoo"'
Autor:
Jong Woong Park, Hyenmin Park, June Hyuk Kim, Hong Moule Kim, Chang Hyoung Yoo, Hyun Guy Kang
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract Lattice structures for implants can be printed using metal three-dimensional (3D)-printing and used as a porous microstructures to enhance bone ingrowth as orthopedic implants. However, designs and 3D-printed products can vary. Thus, we aime
Externí odkaz:
https://doaj.org/article/ce4a80fb9ceb4933bd1c828935c4f3fb
Autor:
Yura Kang, Deok-Hui Nam, Chang-Hyoung Yoo, Myung-Hyun Lee, Suklyun Hong, Seong-Min Jeong, Won-Seon Seo
Publikováno v:
Journal of Crystal Growth. 485:78-85
In this study, we thermodynamically reviewed the suitable growth process conditions of α-SiC in the Si-C-H system using tetramethylsilane (TMS) and in the Si-C-H-Cl system using methyltrichlorosilane (MTS). In the Si-C-H-Cl system, pure solid SiC wa
Autor:
Deok Hui Nam, Ji Young Yoon, Chang Hyoung Yoo, Won-Jae Lee, Byeong Geun Kim, Won Seon Seo, Seong-Min Jeong, Myung Hyun Lee, Yong Gun Shul
Publikováno v:
Journal of Crystal Growth. 435:84-90
Tetramethylsilane (TMS) was recently proposed as a safe precursor for SiC single crystal growth through high temperature chemical vapor deposition (HTCVD). Because the C content of TMS is much higher than Si, the exhaust gas from the TMS-based HTCVD
Autor:
Won-Seon Seo, Chang-Hyoung Yoo, Jiyoung Yoon, Seong-Min Jeong, Byeong Geun Kim, Deok-Hui Nam, Myung-Hyun Lee
Publikováno v:
CrystEngComm. 17:3148-3152
High temperature chemical vapor deposition (HTCVD), an alternate method for crystal growth of SiC, was recently deemed to be a safe method when tetramethylsilane (TMS) is used. In this study, we report on the characteristics of condensation of vapor