Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Chang Ho Woo"'
Autor:
Kwangsun Ryu, Seunguk Lee, Chang Ho Woo, Junchan Lee, Eunjin Jang, Jaemin Hwang, Jin-Kyu Kim, Wonho Cha, Dong-guk Kim, BonJu Koo, SeongOg Park, Dooyoung Choi, Cheong Rim Choi
Publikováno v:
Journal of Astronomy and Space Sciences, Vol 39, Iss 3, Pp 117-126 (2022)
The Ionospheric Anomaly Monitoring by Magnetometer And Plasma-probe (IAMMAP) is one of the scientific instruments for the Compact Advanced Satellite 500-3 (CAS 500-3) which is planned to be launched by Korean Space Launch Vehicle in 2024. The main
Externí odkaz:
https://doaj.org/article/0fbc7dde48d641d4b506a1748df3a3c9
Publikováno v:
Journal of Astronomy and Space Sciences, Vol 37, Iss 1, Pp 35-42 (2020)
Particle-in-cell simulations were performed to understand the interaction of the solar wind with localized magnetic fields on the sunlit surface of the Moon. The results indicated a mini-magnetosphere was formed which had a thin magnetopause with t
Externí odkaz:
https://doaj.org/article/77f16c2311fc4157bcb6a255cd1a96a2
Publikováno v:
Current Applied Physics. 51:71-79
Publikováno v:
Metals and Materials International. 18:1055-1060
Al2O3 dielectric layers with a dense and atomically flat surface were grown at relatively low temperatures of 150 °C by atomic layer deposition (ALD) for use as the gate oxide of transparent and flexible oxide thin-film-transistors (TFTs). The ALD g
Publikováno v:
Thin Solid Films. 519:5146-5149
We fabricated bottom gate thin-film-transistors (TFTs) with solution processed InGaZnO (IGZO) channel layers thermal-annealed at various temperatures. The solution based process inherently requires heat treatment at high temperatures to complete the
Influence of active layer thickness and annealing in zinc oxide TFT grown by atomic layer deposition
Autor:
Chang Ho Woo, Jeong Yong Lee, Geun Young Yeom, Hyung Koun Cho, Sooyeon Hwang, Hyoung Jin Cho, Cheol Hyoun Ahn
Publikováno v:
Surface and Interface Analysis. 42:955-958
We utilized atomic layer deposition (ALD) for the growth of the ZnO channel layers in the oxide thin-film-transistors (TFTs) with a bottom-gate structure using a SiO 2 /p-Si substrate. For fundamental study, the effect of the channel thickness and th
Publikováno v:
Physica B: Condensed Matter. 404:4835-4838
This study examined the effect of thermal annealing of the channel layers on the device performance of ZnO thin-film-transistors (TFTs). Thermal annealing of the ZnO channel layers grown by sputtering was performed at various temperatures under a nit
Publikováno v:
ECS Meeting Abstracts. :1628-1628
not Available.