Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Chang Ho Woo"'
Autor:
Kwangsun Ryu, Seunguk Lee, Chang Ho Woo, Junchan Lee, Eunjin Jang, Jaemin Hwang, Jin-Kyu Kim, Wonho Cha, Dong-guk Kim, BonJu Koo, SeongOg Park, Dooyoung Choi, Cheong Rim Choi
Publikováno v:
Journal of Astronomy and Space Sciences, Vol 39, Iss 3, Pp 117-126 (2022)
The Ionospheric Anomaly Monitoring by Magnetometer And Plasma-probe (IAMMAP) is one of the scientific instruments for the Compact Advanced Satellite 500-3 (CAS 500-3) which is planned to be launched by Korean Space Launch Vehicle in 2024. The main
Externí odkaz:
https://doaj.org/article/0fbc7dde48d641d4b506a1748df3a3c9
Publikováno v:
Journal of Astronomy and Space Sciences, Vol 37, Iss 1, Pp 35-42 (2020)
Particle-in-cell simulations were performed to understand the interaction of the solar wind with localized magnetic fields on the sunlit surface of the Moon. The results indicated a mini-magnetosphere was formed which had a thin magnetopause with t
Externí odkaz:
https://doaj.org/article/77f16c2311fc4157bcb6a255cd1a96a2
Publikováno v:
Current Applied Physics. 51:71-79
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02d4e99a009b2f5e8fa1170a83cb744a
https://doi.org/10.1016/j.cap.2023.05.003
https://doi.org/10.1016/j.cap.2023.05.003
Publikováno v:
Metals and Materials International. 18:1055-1060
Al2O3 dielectric layers with a dense and atomically flat surface were grown at relatively low temperatures of 150 °C by atomic layer deposition (ALD) for use as the gate oxide of transparent and flexible oxide thin-film-transistors (TFTs). The ALD g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01dd83bb8f8fc851683fd2fe1d865e9e
https://doi.org/10.1007/s12540-012-6020-5
https://doi.org/10.1007/s12540-012-6020-5
Publikováno v:
Thin Solid Films. 519:5146-5149
We fabricated bottom gate thin-film-transistors (TFTs) with solution processed InGaZnO (IGZO) channel layers thermal-annealed at various temperatures. The solution based process inherently requires heat treatment at high temperatures to complete the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89328e32bf4ac1357cb789e89b727d13
https://doi.org/10.1016/j.tsf.2011.01.074
https://doi.org/10.1016/j.tsf.2011.01.074
Influence of active layer thickness and annealing in zinc oxide TFT grown by atomic layer deposition
Autor:
Chang Ho Woo, Jeong Yong Lee, Geun Young Yeom, Hyung Koun Cho, Sooyeon Hwang, Hyoung Jin Cho, Cheol Hyoun Ahn
Publikováno v:
Surface and Interface Analysis. 42:955-958
We utilized atomic layer deposition (ALD) for the growth of the ZnO channel layers in the oxide thin-film-transistors (TFTs) with a bottom-gate structure using a SiO 2 /p-Si substrate. For fundamental study, the effect of the channel thickness and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41bb81563f7b052d6ec85b8307f187fc
https://doi.org/10.1002/sia.3357
https://doi.org/10.1002/sia.3357
Publikováno v:
Physica B: Condensed Matter. 404:4835-4838
This study examined the effect of thermal annealing of the channel layers on the device performance of ZnO thin-film-transistors (TFTs). Thermal annealing of the ZnO channel layers grown by sputtering was performed at various temperatures under a nit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52fe09fad515dcaad73b8fc4c06c5581
https://doi.org/10.1016/j.physb.2009.08.171
https://doi.org/10.1016/j.physb.2009.08.171
Publikováno v:
ECS Meeting Abstracts. :1628-1628
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abe8061e24a4a5bc18076f352fec6788
https://doi.org/10.1149/ma2006-02/34/1628
https://doi.org/10.1149/ma2006-02/34/1628
Publikováno v:
2014 International Symposium on Computer, Consumer & Control; 2014, p458-461, 4p
Publikováno v:
Metals & Materials International; Dec2012, Vol. 18 Issue 6, p1055-1060, 6p