Zobrazeno 1 - 10
of 96
pro vyhledávání: '"Chang, T.H.P."'
Autor:
Rothman, S., Iskander, N., Attwood, D.T., McQuaid, K., Grendell, J., Kirz, J., Ade, H., McNulty, I., Rarback, H., Vladimirsky, Y., Kern, D., Chang, T.H.P.
Publikováno v:
Rothman, S.; Iskander, N.; Attwood, D.T.; McQuaid, K.; Grendell, J.; Kirz, J.; et al.(2017). The Interior of an Whole and Unmodified Biological Object--The Zymogen Granule--Viewed with High Resolution X-Ray Microscopy. Biochimica et biophysica acta, 991(3). Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/92b1n137
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______325::78183c6426217dbc4807faa2baab6539
http://www.escholarship.org/uc/item/92b1n137
http://www.escholarship.org/uc/item/92b1n137
Publikováno v:
In Microelectronic Engineering 2001 57:117-135
Autor:
Grobman, W.D., Luhn, H.E., Donohue, T.P., Speth, A.J., Wilson, A.D., Hatzakis, M., Chang, T.H.P.
Publikováno v:
1978 International Electron Devices Meeting; 1978, p58-61, 4p
Publikováno v:
1978 International Electron Devices Meeting; 1978, p50-53, 4p
Autor:
Sai-Halasz, G.A., Wordeman, M.R., Kern, D.P., Ganin, E., Rishton, S., Ng, H.Y., Zicherman, D.S., Moy, D., Chang, T.H.P., Dennard, R.H.
Publikováno v:
1987 International Electron Devices Meeting; 1987, p397-400, 4p
Autor:
Grobman, W.D., Luhn, H.E., Donohue, T.P., Speth, A.J., Wilson, A., Hatzakis, M., Chang, T.H.P.
Publikováno v:
IEEE Transactions on Electron Devices; 1979, Vol. 26 Issue 4, p360-368, 9p
Autor:
Sai-Halasz, G.A., Wordeman, M.R., Kern, D.P., Ganin, E., Rishton, S., Zicherman, D.S., Schmid, H., Polcari, M.R., Ng, H.Y., Restle, P.J., Chang, T.H.P., Dennard, R.H.
Publikováno v:
IEEE Electron Device Letters; 1987, Vol. 8 Issue 10, p463-466, 4p
Autor:
Grobman, W.D., Luhn, H.E., Donohue, T.P., Speth, A.J., Wilson, A., Hatzakis, M., Chang, T.H.P.
Publikováno v:
IEEE Journal of Solid-State Circuits; 1979, Vol. 14 Issue 2, p282-290, 9p
Publikováno v:
IEEE Transactions on Electron Devices; 1991, Vol. 38 Issue 10, p2284-2288, 5p
Autor:
Chang, T.H.P., Wallman, B.A.
Publikováno v:
IEEE Transactions on Electron Devices; 1972, Vol. 19 Issue 5, p629-635, 7p