Zobrazeno 1 - 10
of 1 602
pro vyhledávání: '"Chang, K-J"'
Autor:
Han, W. H., Chang, K. J.
Here, we propose quantum spin Hall-like phononic states in van der Waals bilayer systems with antiferromagnetic ordering. Antiferromagnetic ordering in bilayer systems with small interlayer interaction makes the total Chern number zero, where the Che
Externí odkaz:
http://arxiv.org/abs/1903.05286
Publikováno v:
Phys. Rev. Lett. 120, 157001 (2018)
Diamond Si is a semiconductor with an indirect band gap that is the basis of modern semiconductor technology. Although many metastable forms of Si were observed using diamond anvil cells for compression and chemical precursors for synthesis, no metal
Externí odkaz:
http://arxiv.org/abs/1708.04746
Based on ab initio evolutionary crystal structure search computation, we report a new phase of phosphorus called green phosphorus ({\lambda}-P), which exhibits the direct band gaps ranging from 0.7 to 2.4 eV and the strong anisotropy in optical and t
Externí odkaz:
http://arxiv.org/abs/1705.05073
Based on the first-principles evolutionary materials design, we report a stable boron Kagome lattice composed of triangles in triangles on a two-dimensional sheet. The Kagome lattice can be synthesized on a silver substrate, with selecting Mg atoms a
Externí odkaz:
http://arxiv.org/abs/1704.06842
Graphene is known as a two-dimensional Dirac semimetal, in which electron states are described by the Dirac equation of relativistic quantum mechanics. Three-dimensional analogues of graphene are characterized by Dirac points or lines in momentum spa
Externí odkaz:
http://arxiv.org/abs/1610.04383
We report pure carbon-based superlattices that exhibit direct band gaps and excellent optical absorption and emission properties at the threshold energy. The structures are nearly identical to that of cubic diamond except that defective layers charac
Externí odkaz:
http://arxiv.org/abs/1601.00420
Silicon is the most popular material used in electronic devices. However, its poor optical properties owing to its indirect band gap nature limit its usage in optoelectronic devices. Here we present the discovery of super-stable pure-silicon superlat
Externí odkaz:
http://arxiv.org/abs/1504.04134
Publikováno v:
Phys. Rev. B 90, 085435 (2014)
We propose a new finite-size correction scheme for the formation energy of charged defects and impurities in one-dimensional systems within density functional theory. The energy correction in a supercell geometry is obtained by solving the Poisson eq
Externí odkaz:
http://arxiv.org/abs/1402.5733
Publikováno v:
Appl. Phys. Lett. 97, 022108 (2010)
We find that O-vacancy (Vo) acts as a hole trap and play a role in negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors. Photo-excited holes drifted toward the channel/dielectric interface due to small potential
Externí odkaz:
http://arxiv.org/abs/1006.4913
Autor:
Bang, Junhyeok, Chang, K. J.
Publikováno v:
Physical Review B 81, 193412 (2010) (http://link.aps.org/doi/10.1103/PhysRevB.81.193412)
We report a metal-insulator transition in disordered graphene with low coverages of hydrogen atoms. Hydrogen interacting with graphene creates short-range disorder and localizes states near the neutrality point. The energy range of localization grows
Externí odkaz:
http://arxiv.org/abs/1003.2041